MAC15M

MAC15M KERSEMI | Alldatasheet

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Technical content

/C0077/C0065/C0067/C0049/C0053/C0077/C0044 /C0077/C0065/C0067/C0049/C0053/C0078 /C0084/C0114/C0105/C0097/C0099/C0115 Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Blocking V oltage to 800 V olts On-State Current Rating of 15 Amperes RMS at 80°C Uniform Gate Trigger Currents in Three Modes High Immunity to dv/dt — 250 V/µs minimum at 125°C Minimizes Snubber Networks for Protection Industry Standard TO-220AB Package High Commutating di/dt — 9.0 A/ms minimum at 125°C Operational in Three Quadrants, Q1, Q2, and Q3 Device Marking: Logo, Device Type, e.g., MAC15M, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off–State Voltage(1) (–40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC15M MAC15N VDRM, VRRM 600 800 Volts On–State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C) IT(RMS) A Peak Non-repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ = 125°C) ITSM 150 A Circuit Fusing Consideration (t = 8.3 ms) I2t A2s Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) PGM Watts Average Gate Power (t = 8.3 ms, TC = 80°C) PG(AV) 0.5 Watts Operating Junction Temperature Range TJ –40 to +125 Storage Temperature Range Tstg –40 to +150 TRIACS

15 AMPERES RMS

ORDERING INFORMATION

MAC15M TO220AB 50 Units/Rail MAC15N TO220AB TO–220AB CASE 221A STYLE 4 2 3 PIN ASSIGNMENT

3 Gate

4 Main Terminal 2

www.kersemi.com

50 Units/Rail

G MT2

MAC15M, MAC15N www.kersemi.com THERMAL CHARACTERISTICS Symbol Characteristic Value Unit R θJC R θJA Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient 2.0 62.5 °C/W TL Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds 260

ELECTRICAL CHARACTERISTICS

(TJ = 25°C unless otherwise noted; Electricals apply in both directions) Symbol Characteristic Min Typ Max Unit OFF CHARACTERISTICS IDRM , IRRM Peak Repetitive Blocking Current (VD = Rated VDRM , VRRM ; Gate Open) T J = 25°C TJ = 125°C 0.01 2.0 mA ON CHARACTERISTICS VTM Peak On-State Voltage(1) (ITM = ± 21 A Peak) 1.2 1.6 Volts IGT Gate Trigger Current (Continuous DC) (VD = 12 V, RL = 100 Ω ) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) 5.0 5.0 5.0 mA IH Hold Current (VD = 12 Vdc, Gate Open, Initiating Current = ±150 mA) mA IL Latching Current (VD = 24 V, IG = 35 mA) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) mA VGT Gate Trigger Voltage (VD = 12 V, RL = 100 Ω ) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) 0.5 0.5 0.5 0.75 0.72 0.82 1.5 1.5 1.5 Volts DYNAMIC CHARACTERISTICS (di/dt)c Rate of Change of Commutating Current; See Figure 10. (VD = 400 V, ITM = 6.0 A, Commutating dv/dt = 24 V/µs, C L = 10 µF Gate Open, TJ = 125°C, f = 250 Hz, No Snubber) L L = 40 mH 9.0 A/ms dv/dt Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM , Exponential Waveform, Gate Open, TJ = 125°C) 250 V/µs (1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

MAC15M, MAC15N www.kersemi.com + Current + Voltage VTM IH Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current Voltage Current Characteristic of Triacs (Bidirectional Device) IDRM at VDRM on state off state IRRM at VRRM Quadrant 1 MainTerminal 2 + Quadrant 3 MainTerminal 2 –VTM IH VTM Maximum On State Voltage IH Holding Current MT1 (+) IGT GATE (+) MT2 REF MT1 (–) IGT GATE (+) MT2 REF MT1 (+) IGT GATE (–) MT2 REF MT1 (–) IGT GATE (–) MT2 REF MT2 NEGATIVE (Negative Half Cycle) MT2 POSITIVE (Positive Half Cycle) Quadrant III Quadrant IV Quadrant II Quadrant I Quadrant Definitions for a Triac IGT – + IGT All polarities are referenced to MT1. With in–phase signals (using standard AC lines) quadrants I and III are used.

Figure 6. Typical Holding Current versus Junction Figure 7. Gate Trigger Voltage versus Junction Figure 8. Critical Rate of Rise of Off–State Voltage Figure 9. Critical Rate of Rise of Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c

200 VRMS

Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.

MAC15M, MAC15N www.kersemi.com PACKAGE DIMENSIONS STYLE 4: PIN 1. MAIN TERMINAL 1 2. MAIN TERMINAL 2 3. GATE 4. MAIN TERMINAL 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 Q H Z L V G N A K 12 3 D SEATING PLANE –T– C ST U R J TO–220AB CASE 221A–09 ISSUE Z