MAC12D KERSEMI | Alldatasheet

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MAC12D, MAC12M, MAC12N Triacs Silicon Bidirectional Thyristors Designed for high performance full−wave ac control applications where high noise immunity and commutating di/dt are required. Blocking V oltage to 800 V olts On−State Current Rating of 12 Amperes RMS at 70°C Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3 High Immunity to dv/dt — 250 V/µs Minimum at 125°C High Commutating di/dt — 6.5 A/ms Minimum at 125°C Industry Standard TO−220 AB Package High Surge Current Capability — 100 Amperes Device Marking: Logo, Device Type, e.g., MAC12D, Date Code MAXIMUM RATINGS J = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (1) J = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC12D MAC12M MAC12N V DRM, V RRM 400 600 800 Volts On-State RMS Current (All Conduction Angles; T C = 70°C) I T(RMS) A Peak Non-Repetitive Surge Current (One Full Cycle, 60 Hz, T J = 125°C) I TSM 100 A Circuit Fusing Consideration (t = 8.33 ms) I t A sec Peak Gate Power (Pulse Width ≤ 1.0 µs, T C = 80°C) P GM Watts Average Gate Power (t = 8.3 ms, T C = 80°C) P G(AV) 0.35 Watts Operating Junction Temperature Range T J −40 to +125 Storage Temperature Range T stg −40 to +150 TRIACS

12 AMPERES RMS

ORDERING INFORMATION

MAC12D TO220AB 50 Units/Rail MAC12M TO220AB MAC12N TO220AB TO−220AB CASE 221A STYLE 4 2 3 PIN ASSIGNMENT

3 Gate

4 Main Terminal 2

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50 Units/Rail

G MT2

MAC12D, MAC12M, MAC12N THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance — Junction to Case — Junction to Ambient R θJC R θJA 2.2 62.5 °C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T L 260

ELECTRICAL CHARACTERISTICS

J = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current T J = 25°C D = Rated V DRM , V RRM , Gate Open) T J = 125°C I DRM I RRM 0.01 2.0 mA ON CHARACTERISTICS Peak On−State Voltage (1) TM = 17 A) V TM 1.85 Volts Gate Trigger Current (Continuous dc) (V D = 12 V, R L = 100 Ω ) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) I GT 5.0 5.0 5.0 mA Hold Current (V D = 12 V, Gate Open, Initiating Current = 150 mA) I H mA Latch Current (V D = 24 V, I G = 35 mA) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) I L mA Gate Trigger Voltage (Continuous dc) (V D = 12 V, R L = 100 Ω ) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) V GT 0.5 0.5 0.5 0.78 0.70 0.71 1.5 1.5 1.5 Volts DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current D = 400 V, ITM = 4.4A, Commutating dv/dt = 18 V/µs, Gate Open, T J = 125°C, f = 250 Hz, No Snubber) (di/dt)c 6.5 A/ms Critical Rate of Rise of Off−State Voltage D = Rated V DRM , Exponential Waveform, Gate Open, T J = 125°C) dv/dt 250 500 V/µs Repetitive Critical Rate of Rise of On-State Current IPK = 50 A; PW = 40 µsec; diG/dt = 200 mA/µsec; f = 60 Hz di/dt A/µs (1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. www.kersemi.com

MAC12D, MAC12M, MAC12N + Current + Voltage V TM I H Symbol Parameter V DRM Peak Repetitive Forward Off State Voltage I DRM Peak Forward Blocking Current V RRM Peak Repetitive Reverse Off State Voltage I RRM Peak Reverse Blocking Current Voltage Current Characteristic of Triacs (Bidirectional Device) I DRM at V DRM on state off state I RRM at V RRM Quadrant 1 MainTerminal 2 + Quadrant 3 MainTerminal 2 −V TM I H V TM Maximum On State Voltage I H Holding Current MT1 (+) I GT GATE (+) MT2 REF MT1 (−) I GT GATE (+) MT2 REF MT1 (+) I GT GATE (−) MT2 REF MT1 (−) I GT GATE (−) MT2 REF MT2 NEGATIVE (Negative Half Cycle) MT2 POSITIVE (Positive Half Cycle) Quadrant III Quadrant IV Quadrant II Quadrant I Quadrant Definitions for a Triac I GT − + I GT All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. www.kersemi.com

MAC12D, MAC12M, MAC12N PACKAGE DIMENSIONS STYLE 4: PIN 1. MAIN TERMINAL 1 2. MAIN TERMINAL 2 3. GATE 4. MAIN TERMINAL 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 Q H Z L V G N A K 12 3 D SEATING PLANE −T− C ST U R J TO−220AB CASE 221A−09 ISSUE Z www.kersemi.com