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Technical content

Page:P2-P1 Plastic-Encapsulate Transistors

FEATURES

  • High emitter-base voltage
  • low on resistance Marking:MAX Maximum Ratings (Ta=25 unless otherwise noted) Parameter Symbol V alue Unit Collector-Base Voltage V CBO 25 V Collector-Emitter Voltage V CEO 20 V Emitter-Base Voltage V EBO 12 V Collector Current -Continuous IC 300 mA Collector Power dissipation PC 0.2 W Junction Temperature TJ 150 Storage Temperature Tstg -55to +150 ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V CBO IC =100μA, I E=0 25 V Collector-emitter breakdown voltage V CEO IC =1mA, IB =0 20 V Emitter-base breakdown voltage V EBO IE=100μA, IC =0 12 V Collector cut-off current ICBO V CB =25 V, IE=0 0.1 μA Emitter cut-off current IEBO V EB =12V, I C =0 0.1 μA DC current gain hFE (FOR) V CE =2V, IC =4 mA 200 1000 hFE (REV) V CE = 2V, IC = 4mA 20 Collector-emitter saturation voltage V CE (sat) I C = 100mA, IB =10 mA 0.25 V Base-emitter saturation voltage V BE (sat) I C = 100mA, IB =10mA 1 V Transition frequency fT V CE =10V, IC = 1mA f=100MHz

60 MHz

output capacitance C ob V CB =1 0V,IE=0,f=1MHz 10 pF On resistance R (on) V in=0.3V ,IB =1m A,f=1KH Z 0.6 Ω KTD1304 (NPN) 1. BASE 2. EMITTER SOT-23 3. COLLECTO MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/

Page:P2-P2 Plastic-Encapsulate Transistors Typical CharacteristicsKTD1304 MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/