KSMT458P KERSEMI | Alldatasheet
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Technical content
Features
1) Low gate charge. 2) Green device available. 3) Advanced high cell denity trench technology for ultra RDS(ON) 4) Excellent package for good heat dissipation. SOT-223 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-1 3.4 AContinuous Drain Current-T=100℃ 10 Pulsed Drain Current2 — EAS Single Pulse Avalanche Energy3 — mJ PD Power Dissipation4 30 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics BVDSS RDSON ID -30V 130MΩ 3.4A Symbol Parameter Ratings Units RƟJC Thermal Resistance, Junction to Case1 42 ℃/WRƟJA Thermal Resistance ,Junction to Ambient1 12
KERSMI ELECTRONIC CO.,LTD. -30V P-channel MOSFET www.kersemi.com 2 Package Marking and Ordering Information Part NO. Marking Package KSMT458P KSMT458P SOT-223 Electrical Characteristics TC=25℃ unless otherwise noted Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA -30 — — v IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — -1 μA IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VDS=VDS, ID=250μA -1 -1.8 -3 V RDS(ON) Drain-Source On Resistance² VDS=10V,ID=6A — 105 130 MΩ VDS=2.5V,ID=5A — 157 200 GFS Forward Transconductance VDS=5V,ID=12A — 3 — S Dynamic Characteristics Ciss Input Capacitance VDS=15V,VGS=0V, f=1MHz — 205 — pFCoss Output Capacitance — 55 — Crss Reverse Transfer Capacitance — 26 — Switching Characteristics td(on) Turn-On Delay Time VDS=20V, VGS=10V,RGEN=3.3Ω — 4.5 9 ns tr Rise Time — 12.5 23 ns td(off) Turn-Off Delay Time — 11 20 ns tf Fall Time — 2 4 ns Qg Total Gate Charge VGS=4.5V, VDS=20V, ID=6A — 2.5 3.5 nC Qgs Gate-Source Charge — 0.7 — nC Qgd Gate-Drain “Miller” Charge — 1 — nC Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² VGS=0V,IS =1A — -0.8 -12 V trr Reverse Recovery Time IF=7A,di/dt=100A/μS — — — ns Qrr Reverse Recovery Charge — — — nC Notes: