KSMT1006N KERSEMI | Alldatasheet
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1) Low gate charge. 2) Green device available. 3) Advanced high cell denity trench technology for ultra RDS(ON) 4) Excellent package for good heat dissipation. SOT-223 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-1 2.3 A Continuous Drain Current-T=100℃ 1.6 Pulsed Drain Current2 1.3 EAS Single Pulse Avalanche Energy3 54 mJ PD Power Dissipation4 2.1 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics BVDSS RDSON ID 60V 0.22Ω 1.6A Symbol Parameter Ratings Units RƟJC Thermal Resistance ,Junction to Case1 120 ℃/W RƟJA Thermal Resistance, Junction to Ambient1 6
KERSMI ELECTRONIC CO.,LTD. 60V N-channel MOSFET www.kersemi.com Package Marking and Ordering Information Part NO. Marking Package KSMT1006N KSMT1006N SOT-223 Electrical Characteristics TC=25℃ unless otherwise noted Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA 60 — — v IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — 25 μA IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VDS=VDS, ID=250μA 2.0 — 4.0 V RDS(ON) Drain-Source On Resistance² VDS=10V ,ID=6A — — 0.22 Ω VDS=2.5V ,ID=5A — — — GFS Forward Transconductance VDS=5V,ID=12A 3.0 — — S Dynamic Characteristics Ciss Input Capacitance VDS=15V,VGS=0V , f=1MHz — 160 — pF Coss Output Capacitance — 55 — Crss Reverse Transfer Capacitance — 19 — Switching Characteristics td(on) Turn-On Delay Time VDS=20V , VGS=10V,RGEN=3.3Ω — 7.4 — ns tr Rise Time — 18 — ns td(off) Turn-Off Delay Time — 18 — ns tf Fall Time — 17 — ns Qg Total Gate Charge VGS=4.5V , VDS=20V, ID=6A — — 8.0 nC Qgs Gate-SourceCharge — — 1.7 nC Qgd Gate-Drain “Miller” Charge — — 3.3 nC Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² VGS=0V,IS =1A — — 1.3 V trr Reverse Recovery Time IF=7A,di/dt=100A/μS — 31 47 ns Qrr Reverse Recovery Charge — 46 68 nC Notes:
KERSMI ELECTRONIC CO.,LTD. 60V N-channel MOSFET www.kersemi.com 1. The data tested by surface mounted on a 1 inch ²FR-4 board 2OZ copper . 2. The data tested by pulse width≤300us,duty cycle≤2% 4. The power dissipation is limited by 150 ℃ junction temperature. Typical Characteristics TJ=25℃ unless otherwise noted Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On -Resistance Vs. Temperature
KERSMI ELECTRONIC CO.,LTD. 60V N-channel MOSFET www.kersemi.com Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs. Drain-to-Source Voltage Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Case