KSMN4420 KERSEMI | Alldatasheet
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Features
1) Low gate charge. 2) Green device available. 3) Advanced high cell denity trench technology for ultra RDS(ON) 4) Excellent package for good heat dissipation. SOP-8 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-1 13.7 A Continuous Drain Current-T=100℃ 9.7 Pulsed Drain Current2 60 EAS Single Pulse Avalanche Energy3 — mJ PD Power Dissipation4 3.1 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to 150 ℃ Thermal Characteristics BVDSS RDSON ID 30V 10.5MΩ 13.7A
KERSMI ELECTRONIC CO.,LTD. 30V N-channel MOSFET www.kersemi.com Package Marking and Ordering Information Part NO. Marking Package KSMN4420 KSMN4420 SOP-8 Electrical Characteristics TC=25℃ unless otherwise noted Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA 30 — — v IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — 0.004 1 μA IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — 100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VDS=VDS, ID=250μA 0.6 1.1 2 V RDS(ON) Drain-Source On Resistance² VDS=10V ,ID=6A — 8.3 10.5 MΩ GFS Forward Transconductance VDS=5V,ID=12A 30 37 — S Dynamic Characteristics Ciss Input Capacitance VDS=15V,VGS=0V , f=1MHz — 3656 4050 pF Coss Output Capacitance — 256 — Crss Reverse Transfer Capacitance — 168 — Switching Characteristics td(on) Turn-On Delay Time VDS=20V , VGS=10V,RGEN=3.3Ω — 5.5 9 ns tr Rise Time — 3.4 7 ns td(off) Turn-Off Delay Time — 49.8 75 ns tf Fall Time — 5.9 11 ns Qg Total Gate Charge VGS=4.5V , VDS=20V, ID=6A — 30.5 36 nC Qgs Gate-SourceCharge — 4.6 — nC Qgd Gate-Drain “Miller” Charge — 8.6 — nC Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² VGS=0V,IS =1A — 0.76 1 V trr Reverse Recovery Time IF=7A,di/dt=100A/μS — 22.5 28 ns Qrr Reverse Recovery Charge — 12.5 16 nC Symbol Parameter Ratings Units RƟJC Thermal Resistance ,Junction to Case1 40 ℃/W RƟJA Thermal Resistance, Junction to Ambient1 30