KSMD9120N KERSEMI | Alldatasheet
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Features
1) Low gate charge. 2) Green device available. 3) Advanced high cell denity trench technology for ultra RDS(ON) 4) Excellent package for good heat dissipation. TO-252 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-1 -6.6 A Continuous Drain Current-T=100℃ -4.2 Pulsed Drain Current2 -26 EAS Single Pulse Avalanche Energy3 100 mJ PD Power Dissipation4 40 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics BVDSS RDSON ID -100V 0.48Ω -6.6A Symbol Parameter Ratings Units RƟJC Thermal Resistance ,Junction to Case1 3.1 ℃/W RƟJA Thermal Resistance, Junction to Ambient1 110
KERSMI ELECTRONIC CO.,LTD. --100V P-channel MOSFET www.kersemi.com Package Marking and Ordering Information Part NO. Marking Package KSMD9120N KSMD9120N TO-252 Electrical Characteristics TC=25℃ unless otherwise noted Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA -100 — — v IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — -25 μA IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VDS=VDS, ID=250μA -2.0 — -4.0 V RDS(ON) Drain-Source On Resistance² VDS=10V,ID=6A — — 0.48 Ω VDS=2.5V,ID=5A — — — --- GFS Forward Transconductance VDS=5V,ID=12A 1.4 — — S Dynamic Characteristics Ciss Input Capacitance VDS=15V,VGS=0V, f=1MHz — 350 — pF Coss Output Capacitance — 110 — Crss Reverse Transfer Capacitance — 70 — Switching Characteristics td(on) Turn-On Delay Time VDS=20V, VGS=10V,RGEN=3.3Ω — 14 — ns tr Rise Time — 47 — ns td(off) Turn-Off Delay Time — 28 — ns tf Fall Time — 31 — ns Qg Total Gate Charge VGS=4.5V, VDS=20V, ID=6A — — 27 nC Qgs Gate-SourceCharge — — 5.0 nC Qgd Gate-Drain “Miller” Charge — — 15 nC Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² VGS=0V,IS =1A — — -1.6 V trr Reverse Recovery Time IF=7A,di/dt=100A/Μs — 100 150 ns Qrr Reverse Recovery Charge — 420 630 nC
KERSMI ELECTRONIC CO.,LTD. --100V P-channel MOSFET www.kersemi.com Notes: 1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ unless otherwise noted Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On -Resistance Vs. Temperature
KERSMI ELECTRONIC CO.,LTD. --100V P-channel MOSFET www.kersemi.com Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs. Drain-to-Source Voltage Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Case