KSMD4N65 KERSEMI | Alldatasheet
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Technical content
Features
1) Low gate charge. 2) Green device available. 3) Advanced high cell denity trench technology for ultra RDS(ON) 4) Excellent package for good heat dissipation. TO-252 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-1 4 A Continuous Drain Current-T=100℃ 1.8 Pulsed Drain Current2 11.2 EAS Single Pulse Avalanche Energy3 210 mJ PD Power Dissipation4 49 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics BVDSS RDSON ID 650V 2.7Ω 4A 650V N-channel MOSFET
KERSMI ELECTRONIC CO.,LTD. www.kersemi.com Package Marking and Ordering Information Part NO. Marking Package KSMD4N65 KSMD4N65 TO-252 Electrical Characteristics TC=25℃ unless otherwise noted Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA 650 — — v IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — 1 μA IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VDS=VDS, ID=250μA 2.0 — 4.0 V RDS(ON) Drain-Source On Resistance² VDS=10V,ID=6A — 2.0 2.7 Ω VDS=2.5V,ID=5A — — — GFS Forward Transconductance VDS=5V,ID=12A — 4.7 — S Dynamic Characteristics Ciss Input Capacitance VDS=15V,VGS=0V, f=1MHz — 515 670 pF Coss Output Capacitance — 55 72 Crss Reverse Transfer Capacitance — 6.2 8.5 Switching Characteristics td(on) Turn-On Delay Time VDS=20V, VGS=10V,RGEN=3.3Ω — 10 30 ns tr Rise Time — 42 90 ns td(off) Turn-Off Delay Time — 38 85 ns tf Fall Time — 46 100 ns Qg Total Gate Charge VGS=4.5V, VDS=20V, ID=6A — 15 19 nC Qgs Gate-Source Charge — 2.5 — nC Qgd Gate-Drain “Miller” Charge — 6.6 — nC Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² VGS=0V,IS =1A — — 1.4 V trr Reverse Recovery Time IF=7A,di/dt=100A/μS — 300 — ns Qrr Reverse Recovery Charge — 2.2 — nC Symbol Parameter Ratings Units RƟJC Thermal Resistance, Junction to Case1 2.56 ℃/W RƟJA Thermal Resistance ,Junction to Ambient1 110