KSMD2N80

KSMD2N80 KERSEMI | Alldatasheet

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Technical content

Features

 1.8A, 800V, R DS(on) = 6.3Ω @V GS = 10 V  Low gate charge ( typical 12 nC)  Low Crss ( typical 5.5 pF)  Fast switching  100% avalanche tested  Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter KSMD2N80 / KSMU2N80 Units V DSS Drain-Source Voltage 800 V I D Drain Current - Continuous (T C = 25°C) 1.8 A - Continuous (T C = 100°C) 1.14 A I DM Drain Current - Pulsed (Note 1) 7.2 A V GSS Gate-Source Voltage ± 30 V E AS Single Pulsed Avalanche Energy (Note 2) 180 mJ I AR Avalanche Current (Note 1) 1.8 A E AR Repetitive Avalanche Energy (Note 1) 5.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3)

4.0 V/ns

P D Power Dissipation (T A = 25°C) * 2.5 W Power Dissipation (T C = 25°C) 50 W - Derate above 25°C 0.4 W/°C T J , T STG Operating and Storage Temperature Range -55 to +150 °C T L Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units R θJC Thermal Resistance, Junction-to-Case -- 2.5 °C /W R θJA Thermal Resistance, Junction-to-Ambient * -- 50 °C /W R θJA Thermal Resistance, Junction-to-Ambient -- 110 °C /W S D G TO-252 TO-251 KSMD2N80 / KSMU2N80 2014-7-7 1 www.kersemi.com

(Note 4) (Note 4, 5) (Note 4, 5) (Note 4) T C = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 105mH, I AS = 1.8A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C 3. I SD ≤ 2.4A, di/dt ≤ 200A/µs, V DD ≤ BV DSS, Starting T J = 25°C 4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0 V, I D = 250 µA 800 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient I D = 250 µA, Referenced to 25°C -- 0.9 -- V/°C I DSS Zero Gate Voltage Drain Current V DS = 800 V, V GS = 0 V -- -- 10 µA V DS = 640 V, T C I GSSF Gate-Body Leakage Current, Forward V GS = 30 V, V DS = 0 V -- -- 100 nA I GSSR Gate-Body Leakage Current, Reverse V GS = -30 V, V DS On Characteristics V GS(th) Gate Threshold Voltage V DS = V GS , I D = 250 µA 3.0 -- 5.0 V R DS(on) Static Drain-Source On-Resistance V GS = 10 V, I D = 0.9 A -- 4.9 6.3 Ω g FS Forward Transconductance V DS = 50 V, I D = 0.9 A -- 2.4 -- S Dynamic Characteristics C iss Input Capacitance V DS = 25 V, V GS = 0 V, f = 1.0 MHz -- 425 550 pF C oss Output Capacitance -- 45 60 pF C rss Reverse Transfer Capacitance -- 5.5 7.0 pF Switching Characteristics t d(on) Turn-On Delay Time V DD = 400 V, I D = 2.4 A, R G = 25 Ω -- 12 35 ns t r Turn-On Rise Time -- 30 70 ns t d(off) Turn-Off Delay Time -- 25 60 ns t f Turn-Off Fall Time -- 28 65 ns Q g Total Gate Charge V DS = 640 V, I D = 2.4 A, V GS = 10 V -- 12 15 nC Q gs Gate-Source Charge -- 2.6 -- nC Q gd Gate-Drain Charge -- 6.0 -- nC Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- 1.8 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 7.2 A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S t rr Reverse Recovery Time V GS = 0 V, I S = 2.4 A, dI F / dt = 100 A/µs -- 480 -- ns Q rr Reverse Recovery Charge -- 2.0 -- µC

Electrical Characteristics

2014-7-7 2 www.kersemi.com

V GS 10V Q g Q gs Q gd 3mA V GS DUT V DS 300nF 50KΩ 200nF12V Same Type as DUT Charge V GS 10V Q g Q gs Q gd 3mA V GS DUT V DS 300nF 50KΩ 200nF12V Same Type as DUT V GS V DS 10% 90% t d(on) t r t on t off t d(off) t f V DD 10V V DS R L DUT R G V GS V GS V DS 10% 90% t d(on) t r t on t off t d(off) t f V DD 10V V DS R L DUT R G V GS E AS =L I AS ----2 BV DSS DD BV DSS V DD V DS BV DSS t p V DD I AS V DS (t) I D (t) Time 10V DUT R G L I D t p E AS =L I AS ----2 AS =L I AS ----2 1----2 BV DSS DD BV DSS V DD V DS BV DSS t p V DD I AS V DS (t) I D (t) Time 10V DUT R G L L I D I D t p Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms KSMD2N80 / KSMU2N80 2014-7-7 5 www.kersemi.com

Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT V DS Driver R G Same Type as DUT V GS  dv/dt controlled by R G SD controlled by pulse period V DD L I SD 10V V GS ( Driver ) I SD ( DUT ) V DS ( DUT ) V DD Body Diode Forward Voltage Drop V SD I FM , Body Diode Forward Current Body Diode Reverse Current I RM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT V DS Driver R G Same Type as DUT V GS  dv/dt controlled by R G SD controlled by pulse period V DD L L I SD 10V V GS ( Driver ) I SD ( DUT ) V DS ( DUT ) V DD Body Diode Forward Voltage Drop V SD I FM , Body Diode Forward Current Body Diode Reverse Current I RM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width KSMD2N80 / KSMU2N80 2014-7-7 6 www.kersemi.com

6.60 ±0.20 2.30 ±0.10 0.50 ±0.10 5.34 ±0.30 0.70 ±0.20 0.60 ±0.20 0.80 ±0.20 9.50 ±0.30 6.10 ±0.20 2.70 ±0.20 9.50 ±0.30 6.10 ±0.20 2.70 ±0.20 MIN0.55 0.76 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30 ±0.20 6.60 ±0.20 0.76 ±0.10 (5.34) (1.50) (2XR0.25) (5.04) 0.89 ±0.10 (0.10) (3.05) (1.00) (0.90) (0.70) 0.91 ±0.10 2.30TYP [2.30±0.20] 2.30TYP [2.30±0.20] MAX0.96 DPAK KSMD2N80 / KSMU2N80 2014-7-7 7 www.kersemi.com

(Continued) 6.60 ±0.20 0.76 ±0.10 MAX0.96 2.30TYP [2.30±0.20] 2.30TYP [2.30±0.20] 0.60 ±0.20 0.80 ±0.10 1.80 ±0.20 9.30 ±0.30 16.10 ±0.30 6.10 ±0.20 0.70 ±0.20 5.34 ±0.20 0.50 ±0.10 0.50 ±0.10 2.30 ±0.20 IPAK KSMD2N80 / KSMU2N80 2014-7-7 8 www.kersemi.com