KSMD17P06

KSMD17P06 KERSEMI | Alldatasheet

Document overview

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• PDF pages: 8

Technical content

Features

• -12A, -60V, R DS(on) = 0.135Ω @V GS = -10 V
• Low gate charge ( typical 21 nC)
• Low Crss ( typical 80 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter KSMD17P06 / KSMU17P06 Units V DSS Drain-Source Voltage -60 V I D Drain Current - Continuous (T C = 25°C) -12 A - Continuous (T C = 100°C) -7.6 A I DM Drain Current - Pulsed (Note 1) -48 A V GSS Gate-Source Voltage ± 25 V E AS Single Pulsed Avalanche Energy (Note 2) 300 mJ I AR Avalanche Current (Note 1) -12 A E AR Repetitive Avalanche Energy (Note 1) 4.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns P D Power Dissipation (T A = 25°C) * 2.5 W Power Dissipation (T C = 25°C) 44 W - Derate above 25°C 0.35 W/°C T J , T STG Operating and Storage Temperature Range -55 to +150 °C T L Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units R θJC Thermal Resistance, Junction-to-Case -- 2.85 °C /W R θJA Thermal Resistance, Junction-to-Ambient * -- 50 °C /W R θJA Thermal Resistance, Junction-to-Ambient -- 110 °C /W * When mounted on the minimum pad size recommended (PCB Mount)
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T C = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 2.4mH, I AS = -12A, V DD = -25V, R G = 25 Ω, Starting T J = 25°C 3. I SD ≤ -17A, di/dt ≤ 300A/µs, V DD ≤ BV DSS, Starting T J = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0 V, I D ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient I D = -250 µA, Referenced to 25°C -- -0.06 -- V/°C I DSS Zero Gate Voltage Drain Current V DS = -60 V, V GS = 0 V -- -- -1 µA V DS = -48 V, T C I GSSF Gate-Body Leakage Current, Forward V GS = -25 V, V DS I GSSR Gate-Body Leakage Current, Reverse V GS = 25 V, V DS = 0 V -- -- 100 nA On Characteristics V GS(th) Gate Threshold Voltage V DS = V GS , I D R DS(on) Static Drain-Source On-Resistance V GS = -10 V, I D g FS Forward Transconductance V DS = -30 V, I D Dynamic Characteristics C iss Input Capacitance V DS = -25 V, V GS = 0 V, f = 1.0 MHz -- 690 900 pF C oss Output Capacitance -- 325 420 pF C rss Reverse Transfer Capacitance -- 80 105 pF Switching Characteristics t d(on) Turn-On Delay Time V DD = -30 V, I D = -8.5 A, R G = 25 Ω -- 13 35 ns t r Turn-On Rise Time -- 100 210 ns t d(off) Turn-Off Delay Time -- 22 55 ns t f Turn-Off Fall Time -- 60 130 ns Q g Total Gate Charge V DS = -48 V, I D = -17 A, V GS = -10 V -- 21 27 nC Q gs Gate-Source Charge -- 4.2 -- nC Q gd Gate-Drain Charge -- 10 -- nC Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- -12 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- -48 A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S t rr Reverse Recovery Time V GS = 0 V, I S = -17 A, dI F / dt = 100 A/µs -- 92 -- ns Q rr Reverse Recovery Charge -- 0.32 -- µC (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) KSMD17P06 / KSMU17P06 2014-7-19 2 www.kersemi.com

V GS -10V Q g Q gs Q gd -3mA V GS DUT V DS 300nF 50KΩ 200nF12V Same Type as DUT Charge V GS -10V Q g Q gs Q gd -3mA V GS DUT V DS 300nF 50KΩ 200nF12V Same Type as DUT V DS V GS 10% 90% t d(on) t r t on t off t d(off) t f V DD -10V V DS R L DUT R G V GS V DS V GS 10% 90% t d(on) t r t on t off t d(off) t f V DD -10V V DS R L DUT R G V GS E AS =L I AS ----2 BV DSS DD BV DSS V DD V DS BV DSS t p V DD I AS V DS (t) I D (t) Time -10V DUT R G L I D t p E AS =L I AS ----2 AS =L I AS ----2 1----2 BV DSS DD BV DSS V DD V DS BV DSS t p V DD I AS V DS (t) I D (t) Time -10V DUT R G L L I D I D t p Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms KSMD17P06 / KSMU17P06 2014-7-19 5 www.kersemi.com

Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT V DS Driver R G Compliment of DUT (N-Channel) V GS

• dv/dt controlled by R G SD controlled by pulse period V DD L I SD 10V V GS ( Driver ) I SD ( DUT ) V DS ( DUT ) V DD Body Diode Forward Voltage Drop V SD I FM , Body Diode Forward Current Body Diode Reverse Current I RM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT V DS Driver R G Compliment of DUT (N-Channel) V GS
• dv/dt controlled by R G SD controlled by pulse period V DD L L I SD 10V V GS ( Driver ) I SD ( DUT ) V DS ( DUT ) V DD Body Diode Forward Voltage Drop V SD I FM , Body Diode Forward Current Body Diode Reverse Current I RM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width KSMD17P06 / KSMU17P06 2014-7-19 6 www.kersemi.com

6.60 ±0.20 2.30 ±0.10 0.50 ±0.10 5.34 ±0.30 0.70 ±0.20 0.60 ±0.20 0.80 ±0.20 9.50 ±0.30 6.10 ±0.20 2.70 ±0.20 9.50 ±0.30 6.10 ±0.20 2.70 ±0.20 MIN0.55 0.76 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30 ±0.20 6.60 ±0.20 0.76 ±0.10 (5.34) (1.50) (2XR0.25) (5.04) 0.89 ±0.10 (0.10) (3.05) (1.00) (0.90) (0.70) 0.91 ±0.10 2.30TYP [2.30±0.20] 2.30TYP [2.30±0.20] MAX0.96 DPAK KSMD17P06 / KSMU17P06 2014-7-19 7 www.kersemi.com

(Continued) 6.60 ±0.20 0.76 ±0.10 MAX0.96 2.30TYP [2.30±0.20] 2.30TYP [2.30±0.20] 0.60 ±0.20 0.80 ±0.10 1.80 ±0.20 9.30 ±0.30 16.10 ±0.30 6.10 ±0.20 0.70 ±0.20 5.34 ±0.20 0.50 ±0.10 0.50 ±0.10 2.30 ±0.20 IPAK KSMD17P06 / KSMU17P06 2014-7-19 8 www.kersemi.com