KSMD014 KERSEMI | Alldatasheet
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1) Low gate charge. 2) Green device available. 3) Advanced high cell denity trench technology for ultra RDS(ON) 4) Excellent package for good heat dissipation. TO-252 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-1 7.7 A Continuous Drain Current-T=100℃ 4.9 Pulsed Drain Current2 31 EAS Single Pulse Avalanche Energy3 49 mJ PD Power Dissipation4 25 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics BVDSS RDSON ID 60V 0.2Ω 7.7A Symbol Parameter Ratings Units RƟJC Thermal Resistance ,Junction to Case1 5.0 ℃/W RƟJA Thermal Resistance, Junction to Ambient1 110
KERSMI ELECTRONIC CO.,LTD. 60V N-channel MOSFET www.kersemi.com Package Marking and Ordering Information Part NO. Marking Package KSMD014 KSMD014 KSMD014 Electrical Characteristics TC=25℃ unless otherwise noted Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA 60 — — v IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — 25 μA IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VDS=VDS, ID=250μA 2.0 — 4.0 V RDS(ON) Drain-Source On Resistance² VDS=10V,ID=6A — — 0.2 Ω VDS=2.5V,ID=5A — — — GFS Forward Transconductance VDS=5V,ID=12A 2.4 — — S Dynamic Characteristics Ciss Input Capacitance VDS=15V,VGS=0V, f=1MHz — 300 — pF Coss Output Capacitance — 160 — Crss Reverse Transfer Capacitance — 29 — Switching Characteristics td(on) Turn-On Delay Time VDS=20V, VGS=10V,RGEN=3.3Ω — 10 — ns tr Rise Time — 50 — ns td(off) Turn-Off Delay Time — 13 — ns tf Fall Time — 19 — ns Qg Total Gate Charge VGS=4.5V, VDS=20V, ID=6A — — 11 nC Qgs Gate-SourceCharge — — 3.1 nC Qgd Gate-Drain “Miller” Charge — — 5.8 nC Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² VGS=0V,IS =1A — — 1.6 V trr Reverse Recovery Time IF=7A,di/dt=100A/μS — 70 140 ns Qrr Reverse Recovery Charge — 0.2 0.4 nC Notes:
KERSMI ELECTRONIC CO.,LTD. 60V N-channel MOSFET www.kersemi.com 1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ unless otherwise noted Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On -Resistance Vs. Temperature
KERSMI ELECTRONIC CO.,LTD. 60V N-channel MOSFET www.kersemi.com Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs. Drain-to-Source Voltage Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Case