KSM830 KERSEMI | Alldatasheet
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Technical content
Features
1) Low gate charge. 2) Green device available. 3) Advanced high cell denity trench technology for ultra RDS(ON) 4) Excellent package for good heat dissipation. TO-220 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-1 5 A Continuous Drain Current-T=100℃ 2.9 Pulsed Drain Current2 18 EAS Single Pulse Avalanche Energy3 7.4 mJ PD Power Dissipation4 74 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to + 150 ℃ Thermal Characteristics BVDSS RDSON ID 500V 1.5Ω 5A 500V N-channel MOSFET
KERSMI ELECTRONIC CO.,LTD. www.kersemi.com Package Marking and Ordering Information Part NO. Marking Package KSM830 KSM830 TO-220 Electrical Characteristics TC=25℃ unless otherwise noted Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA 500 — — v IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — 25 μA IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VDS=VDS, ID=250μA 2.0 — 4.0 V RDS(ON) Drain-Source On Resistance² VDS=10V,ID=6A — — 1.5 Ω VDS=2.5V,ID=5A — — — GFS Forward Transconductance VDS=5V,ID=12A 2.5 — — S Dynamic Characteristics Ciss Input Capacitance VDS=15V,VGS=0V, f=1MHz — 610 — pF Coss Output Capacitance — 160 — Crss Reverse Transfer Capacitance — 68 — Switching Characteristics td(on) Turn-On Delay Time VDS=20V, VGS=10V,RGEN=3.3Ω — 8.2 — ns tr Rise Time — 16 — ns td(off) Turn-Off Delay Time — 42 — ns tf Fall Time — 16 — ns Qg Total Gate Charge VGS=4.5V, VDS=20V, ID=6A — — 38 nC Qgs Gate-SourceCharge — — 5.0 nC Qgd Gate-Drain “Miller” Charge — — 22 nC Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² VGS=0V,IS =1A — — 1.6 V trr Reverse Recovery Time IF=7A,di/dt=100A/μS — 320 640 ns Qrr Reverse Recovery Charge — 1.0 2.0 nC Symbol Parameter Ratings Units RƟJC Thermal Resistance,Junction to Case1 62 ℃/W RƟJA Thermal Resistance,Junction to Ambient1 1.7
- The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper.
- The data tested by ,pulse width≤300us,duty cycle≤2%
- The power dissipation is limited by 150℃ junction temperature.
Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure3 .Output Characteristics Figure4. Normalized On-Resistance vs.