KSM70N08 KERSEMI | Alldatasheet

Document overview

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Technical content

Features

  • 70A, 80V, R DS(on) = 0.017Ω @V GS = 10 V
  • Low gate charge ( typical 75 nC)
  • Low Crss ( typical 180 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • 175 °C maximum junction temperature rating Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter KSM70N08 Units V DSS Drain-Source Voltage 80 V I D Drain Current - Continuous (T C = 25°C) 70 A - Continuous (T C = 100°C) 49.5 A I DM Drain Current - Pulsed (Note 1) 280 A V GSS Gate-Source Voltage ± 25 V E AS Single Pulsed Avalanche Energy (Note 2) 1150 mJ I AR Avalanche Current (Note 1) 70 A E AR Repetitive Avalanche Energy (Note 1) 15.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3)

6.5 V/ns

P D Power Dissipation (T C = 25°C) 155 W - Derate above 25°C 1.03 W/°C T J , T STG Operating and Storage Temperature Range -55 to +175 °C T L Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units R θJC Thermal Resistance, Junction-to-Case -- 0.97 °C /W R θCS Thermal Resistance, Case-to-Sink 0.5 -- °C /W R θJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C /W S D G TO-220 2014-6-29 1 www.kersemi.com

(Note 4) (Note 4, 5) (Note 4, 5) (Note 4) T C = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.32mH, I AS = 70A, V DD = 25V, R G = 25 Ω, Starting T J = 25°C 3. I SD ≤ 70A, di/dt ≤ 300A/µs, V DD ≤ BV DSS, Starting T J = 25°C 4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0 V, I D ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient I D = 250 µA, Referenced to 25°C -- 0.08 -- V/°C I DSS Zero Gate Voltage Drain Current V DS = 80 V, V GS = 0 V -- -- 1 µA V DS = 64 V, T C I GSSF Gate-Body Leakage Current, Forward V GS = 25 V, V DS = 0 V -- -- 100 nA I GSSR Gate-Body Leakage Current, Reverse V GS = -25 V, V DS On Characteristics V GS(th) Gate Threshold Voltage V DS = V GS , I D = 250 µA 2.0 -- 4.0 V R DS(on) Static Drain-Source On-Resistance V GS = 10 V, I D = 35 A -- 0.013 0.017 Ω g FS Forward Transconductance V DS = 30 V, I D = 35 A -- 41 -- S Dynamic Characteristics C iss Input Capacitance V DS = 25 V, V GS = 0 V, f = 1.0 MHz -- 2100 2700 pF C oss Output Capacitance -- 790 1030 pF C rss Reverse Transfer Capacitance -- 180 230 pF Switching Characteristics t d(on) Turn-On Delay Time V DD = 40 V, I D = 70 A, R G = 25 Ω -- 25 60 ns t r Turn-On Rise Time -- 300 610 ns t d(off) Turn-Off Delay Time -- 90 190 ns t f Turn-Off Fall Time -- 145 300 ns Q g Total Gate Charge V DS = 64 V, I D = 70 A, V GS = 10 V -- 75 98 nC Q gs Gate-Source Charge -- 14 -- nC Q gd Gate-Drain Charge -- 37 -- nC Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- 70 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 280 A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 70 A -- -- 1.5 V t rr Reverse Recovery Time V GS = 0 V, I S = 70 A, dI F / dt = 100 A/µs -- 84 -- ns Q rr Reverse Recovery Charge -- 250 -- nC

Electrical Characteristics

2014-6-29 2 www.kersemi.com

V GS 10V Q g Q gs Q gd 3mA V GS DUT V DS 300nF 50KΩ 200nF12V Same Type as DUT Charge V GS 10V Q g Q gs Q gd 3mA V GS DUT V DS 300nF 50KΩ 200nF12V Same Type as DUT V GS V DS 10% 90% t d(on) t r t on t off t d(off) t f V DD 10V V DS R L DUT R G V GS V GS V DS 10% 90% t d(on) t r t on t off t d(off) t f V DD 10V V DS R L DUT R G V GS E AS =L I AS ----2 BV DSS DD BV DSS V DD V DS BV DSS t p V DD I AS V DS (t) I D (t) Time 10V DUT R G L I D t p E AS =L I AS ----2 AS =L I AS ----2 1----2 BV DSS DD BV DSS V DD V DS BV DSS t p V DD I AS V DS (t) I D (t) Time 10V DUT R G L L I D I D t p Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms KSM70N08 2014-6-29 5 www.kersemi.com

Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT V DS Driver R G Same Type as DUT V GS

  • dv/dt controlled by R G SD controlled by pulse period V DD L I SD 10V V GS ( Driver ) I SD ( DUT ) V DS ( DUT ) V DD Body Diode Forward Voltage Drop V SD I FM , Body Diode Forward Current Body Diode Reverse Current I RM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT V DS Driver R G Same Type as DUT V GS
  • dv/dt controlled by R G SD controlled by pulse period V DD L L I SD 10V V GS ( Driver ) I SD ( DUT ) V DS ( DUT ) V DD Body Diode Forward Voltage Drop V SD I FM , Body Diode Forward Current Body Diode Reverse Current I RM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width KSM70N08 2014-6-29 6 www.kersemi.com

4.50 ±0.20 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.40 ±0.20 10.00 ±0.20 1.27 ±0.10 ø3.60 ±0.10 (8.70) 2.80 ±0.10 15.90 ±0.20 10.08 ±0.30 18.95MAX. (1.70) (3.70)(3.00) (1.46) (1.00) (45 9.20 ±0.20 13.08 ±0.20 1.30 ±0.10 1.30 +0.10 –0.05 0.50 +0.10 –0.05 2.54TYP [2.54 ±0.20 2.54TYP [2.54 ±0.20 TO-220 KSM70N08 2014-6-29 www.kersemi.com