KSM61N20 KERSEMI | Alldatasheet

Document overview

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Technical content

Features

  • 61A, 200V, R DS(on) = 0.041Ω @V GS = 10 V  Low gate charge ( typical 58 nC)  Low C rss ( typical 80 pF)  Fast switching  100% avalanche tested  Improved dv/dt capability

Description

These N-Channel enhancement mode power field effect transis- tors are produced using Kersemi proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini- mize on-state resistance, prov ide superior switching perfor- mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi- cient switched mode power supplies and active power factor correction. Absolute Maximum Ratings Thermal Characteristics z z z z z z S D G TO-220 Symbol Parameter KSM61N20 Unit V DSS Drain-Source Voltage 200 V I D Drain Current - Continuous (T C = 25°C) - Continuous (T C = 100°C) 38.5 A A I DM Drain Current - Pulsed (Note 1) 244 A V GSS Gate-Source voltage ±30 V E AS Single Pulsed Avalanche Energy (Note 2) 1440 mJ I AR Avalanche Current (Note 1) 61 A E AR Repetitive Avalanche Energy (Note 1) 41.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3)

4.5 V/ns

P D Power Dissipation (T C = 25°C) - Derate above 25°C 417 3.3 W W/°C T T STG Operating and Storage Temperature Range -55 to +150 °C T L Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 °C Symbol Parameter Min. Max. Unit R θJC Thermal Resistance, Junction-to-Case -- 0.3 °C/W R θJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W KSM61N20 2014-7-1 1 www.kersemi.com

Electrical Characteristics

T C = 25°C unless otherwise noted NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.58mH, I AS = 61A, V DD = 50V, R G = 25Ω, Starting T J = 25°C 3. I SD ≤ 61A, di/dt ≤ 200A/µs, V DD ≤ BV DSS , Starting T J = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Device Marking Device Package Reel Size Tape Width Quantity KSM61N20 KSM61N20 TO-220 - - 50 Symbol Parameter Conditions Min. Typ. Max Units Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0V, I D ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient I D = 250µA, Referenced to 25°C- - 0 . 2 - - V / °C I DSS Zero Gate Voltage Drain Current V DS = 200V, V GS = 0V V DS = 160V, T C = 125°C µA µA I GSSF Gate-Body Leakage Current, Forward V GS = 30V, V DS = 0V -- -- 100 nA I GSSR Gate-Body Leakage Current, Reverse V GS = -30V, V DS = 0V -- -- -100 nA On Characteristics V GS(th) Gate Threshold Voltage V DS = V GS , I D = 250µA3 . 0 - - 5 . 0 V R DS(on) Static Drain-Source On-Resistance V GS = 10V, I D = 30.5A -- 0.034 0.041 Ω g FS Forward Transconductance V DS = 40V, I D =30.5A (Note 4) -- 44.5 -- S Dynamic Characteristics C iss Input Capacitance V DS = 25V, V GS = 0V, f = 1.0MHz -- 2615 3380 pF C oss Output Capacitance -- 645 840 pF C rss Reverse Transfer Capacitance -- 80 120 pF Switching Characteristics t d(on) Turn-On Delay Time V DD = 100V, I D = 61A R G = 25Ω (Note 4, 5) -- 40 90 ns t r Turn-On Rise Time -- 215 440 ns t d(off) Turn-Off Delay Time -- 125 260 ns t f Turn-Off Fall Time -- 170 350 ns Q g Total Gate Charge V DS = 160V, I D = 61A V GS = 10V (Note 4, 5) -- 58 75 nC Q gs Gate-Source Charge -- 19 -- nC Q gd Gate-Drain Charge -- 24 -- nC Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- 61 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 244 A V SD Drain-Source Diode Forward Voltage V GS = 0V, I S = 61A -- -- 1.4 V t rr Reverse Recovery Time V GS = 0V, I S = 61A dI F /dt =100A/µs (Note 4) -- 162 -- ns Q rr Reverse Recovery Charge -- 1.5 -- µC Package Marking and Ordering Information KSM61N20 2014-7-1 2 www.kersemi.com

V GS 10V Q g Q gs Q gd 3mA V GS DUT V DS 300nF 50K Ω 200nF12V Same Type as DUT Charge V GS 10V Q g Q gs Q gd 3mA V GS DUT V DS 300nF 50K Ω 200nF12V Same Type as DUT V GS V DS 10% 90% t d(on) t r t on t off t d(off) t f V DD 10V V DS R L DUT R G V GS V GS V DS 10% 90% t d(on) t r t on t off t d(off) t f V DD 10V V DS R L DUT R G V GS E AS =L I AS ----2 BV DSS DD BV DSS V DD V DS BV DSS t p V DD I AS V DS (t) I D (t) Time 10V DUT R G L I D t p E AS =L I AS ----2 AS =L I AS ----2 1----2 BV DSS DD BV DSS V DD V DS BV DSS t p V DD I AS V DS (t) I D (t) Time 10V DUT R G L L I D I D t p Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms KSM61N20 2014-7-1 5 www.kersemi.com

Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT V DS Driver R G Same Type as DUT V GS  dv/dt controlled by R G SD controlled by pulse period V DD L I SD 10V V GS ( Driver ) I SD ( DUT ) V DS ( DUT ) V DD Body Diode Forward Voltage Drop V SD I FM , Body Diode Forward Current Body Diode Reverse Current I RM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT V DS Driver R G Same Type as DUT V GS  dv/dt controlled by R G SD controlled by pulse period V DD L L I SD 10V V GS ( Driver ) I SD ( DUT ) V DS ( DUT ) V DD Body Diode Forward Voltage Drop V SD I FM , Body Diode Forward Current Body Diode Reverse Current I RM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width KSM61N20 2014-7-1 6 www.kersemi.com

2014-7-1 7 www.kersemi.com