KSM50N06 KERSEMI | Alldatasheet
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Features
1) Low gate charge. 2) Green device available. 3) Advanced high cell denity trench technology for ultra RDS(ON) 4) Excellent package for good heat dissipation. TO-220 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-1 50 A Continuous Drain Current-T=100℃ 35.4 Pulsed Drain Current2 200 EAS Single Pulse Avalanche Energy3 490 mJ PD Power Dissipation4 120 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ℃ Thermal Characteristics BVDSS RDSON ID 60V 0.018Ω 50A
KERSMI ELECTRONIC CO.,LTD. 60V N-channel MOSFET www.kersemi.com Package Marking and Ordering Information Part NO. Marking Package KSM50N06 KSM50N06 TO-220 Electrical Characteristics TC=25℃ unless otherwise noted Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA 60 — — v IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — 1 μA IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VDS=VDS, ID=250μA 2.0 — 4.0 V RDS(ON) Drain-Source On Resistance² VDS=10V,ID=6A — 0.016 0.018 Ω VDS=2.5V,ID=5A — — — --- GFS Forward Transconductance VDS=5V,ID=12A — 22 — S Dynamic Characteristics Ciss Input Capacitance VDS=15V,VGS=0V, f=1MHz — 1180 1540 pF Coss Output Capacitance — 440 580 Crss Reverse Transfer Capacitance — 65 90 Switching Characteristics td(on) Turn-On Delay Time VDS=20V, VGS=10V,RGEN=3.3Ω — 15 40 ns tr Rise Time — 105 220 ns td(off) Turn-Off Delay Time — 60 130 ns tf Fall Time — 65 140 ns Qg Total Gate Charge VGS=4.5V, VDS=20V, ID=6A — 31 41 nC Qgs Gate-Source Charge — 8 — nC Qgd Gate-Drain “Miller” Charge — 13 — nC Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² VGS=0V,IS =1A — — 1.5 V trr Reverse Recovery Time IF=7A,di/dt=100A/ — 52 — ns Qrr Reverse Recovery Charge — 75 — nC Symbol Parameter Ratings Units RƟJC Thermal Resistance, Junction to Case1 1.24 ℃/W RƟJA Thermal Resistance ,Junction to Ambient1 62.5