KSM18N50V2

KSM18N50V2 KERSEMI | Alldatasheet

Document overview

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• PDF pages: 9

Technical content

Features

• 18A, 500V, R DS(on) = 0.265Ω @V GS = 10 V
• Low gate charge ( typical 42 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter KSM18N50V2 KSMF18N50V2 Units V DSS Drain-Source Voltage 500 V I D Drain Current - Continuous (T C = 25°C) 18 18 A - Continuous (T C = 100°C) 12.1 12.1 A I DM Drain Current - Pulsed (Note 1) 72 72 A V GSS Gate-Source Voltage ± 30 V E AS Single Pulsed Avalanche Energy (Note 2) 330 mJ I AR Avalanche Current (Note 1) 18 A E AR Repetitive Avalanche Energy (Note 1) 25 mJ dv/dt Peak Diode Recovery dv/dt (Note 3)

4.5 V/ns

P D Power Dissipation (T C = 25°C) 208 69 W - Derate above 25°C 1.67 0.55 W/°C T J , T STG Operating and Storage Temperature Range -55 to +150 °C T L Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter KSM18N50V2 KSMF18N50V2 Units R θJC Thermal Resistance, Junction-to-Case 0.6 1.8 °C /W R θCS Thermal Resistance, Case-to-Sink 0.5 -- °C /W R θJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C /W TO-220 TO-220F

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T C = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.83mH, I AS = 18A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C 3. I SD ≤ 18A, di/dt ≤ 200A/µs, V DD ≤ BV DSS, Starting T J = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0 V, I D = 250 µA 500 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient I D = 250 µA, Referenced to 25°C -- 0.5 -- V/°C I DSS Zero Gate Voltage Drain Current V DS = 500 V, V GS = 0 V -- -- 1 µA V DS = 400 V, T C I GSSF Gate-Body Leakage Current, Forward V GS = 30 V, V DS = 0 V -- -- 100 nA I GSSR Gate-Body Leakage Current, Reverse V GS = -30 V, V DS On Characteristics V GS(th) Gate Threshold Voltage V DS = V GS , I D = 250 µA 3.0 -- 5.0 V R DS(on) Static Drain-Source On-Resistance V GS = 10 V, I D = 9 A -- 0.225 0.265 Ω g FS Forward Transconductance V DS = 40 V, I D = 9 A (Note 4) -- 16 -- S Dynamic Characteristics C iss Input Capacitance V DS = 25 V, V GS = 0 V, f = 1.0 MHz -- 2530 3290 pF C oss Output Capacitance -- 300 390 pF C rss Reverse Transfer Capacitance -- 11 14.3 pF C oss Output Capacitance V DS = 400 V, V GS = 0 V, f = 1.0 MHz -- 76 -- pF C oss eff. Effective Output Capacitance V DS = 0V to 400 V, V GS = 0 V -- 150 -- pF Switching Characteristics t d(on) Turn-On Delay Time V DD = 250 V, I D = 18 A, R G = 25 Ω (Note 4, 5) -- 40 90 ns t r Turn-On Rise Time -- 150 310 ns t d(off) Turn-Off Delay Time -- 95 200 ns t f Turn-Off Fall Time -- 110 230 ns Q g Total Gate Charge V DS = 400 V, I D = 18 A, V GS = 10 V (Note 4, 5) -- 42 55 nC Q gs Gate-Source Charge -- 12 -- nC Q gd Gate-Drain Charge -- 14 -- nC Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- 18 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 72 A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 18 A -- -- 1.4 V t rr Reverse Recovery Time V GS = 0 V, I S = 18 A, dI F / dt = 100 A/µs (Note 4) -- 420 -- ns Q rr Reverse Recovery Charge -- 5.4 -- µC

Electrical Characteristics

2014-6-27 2 www.kersemi.com

V GS 10V Q g Q gs Q gd 3mA V GS DUT V DS 300nF 50KΩ 200nF12V Same Type as DUT Charge V GS 10V Q g Q gs Q gd 3mA V GS DUT V DS 300nF 50KΩ 200nF12V Same Type as DUT V GS V DS 10% 90% t d(on) t r t on t off t d(off) t f V DD 10V V DS R L DUT R G V GS V GS V DS 10% 90% t d(on) t r t on t off t d(off) t f V DD 10V V DS R L DUT R G V GS E AS =L I AS ----2 BV DSS DD BV DSS V DD V DS BV DSS t p V DD I AS V DS (t) I D (t) Time 10V DUT R G L I D t p E AS =L I AS ----2 AS =L I AS ----2 1----2 BV DSS DD BV DSS V DD V DS BV DSS t p V DD I AS V DS (t) I D (t) Time 10V DUT R G L L I D I D t p Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 2014-6-27 6 www.kersemi.com KSM18N50V2/KSMF18N50V2

Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT V DS Driver R G Same Type as DUT V GS

• dv/dt controlled by R G SD controlled by pulse period V DD L I SD 10V V GS ( Driver ) I SD ( DUT ) V DS ( DUT ) V DD Body Diode Forward Voltage Drop V SD I FM , Body Diode Forward Current Body Diode Reverse Current I RM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT V DS Driver R G Same Type as DUT V GS
• dv/dt controlled by R G SD controlled by pulse period V DD L L I SD 10V V GS ( Driver ) I SD ( DUT ) V DS ( DUT ) V DD Body Diode Forward Voltage Drop V SD I FM , Body Diode Forward Current Body Diode Reverse Current I RM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width 2014-6-27 7 www.kersemi.com KSM18N50V2/KSMF18N50V2

4.50 ±0.20 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.40 ±0.20 10.00 ±0.20 1.27 ±0.10 ø3.60 ±0.10 (8.70) 2.80 ±0.10 15.90 ±0.20 10.08 ±0.30 18.95MAX. (1.70) (3.70)(3.00) (1.46) (1.00) (45 9.20 ±0.20 13.08 ±0.20 1.30 ±0.10 1.30 +0.10 –0.05 0.50 +0.10 –0.05 2.54TYP [2.54 ±0.20 2.54TYP [2.54 ±0.20 TO-220 2014-6-27 8 www.kersemi.com KSM18N50V2/KSMF18N50V2

(Continued) (7.00) (0.70) MAX1.47 (30 3.30 ±0.10 15.80 ±0.20 15.87 ±0.20 6.68 ±0.20 9.75 ±0.30 4.70 ±0.20 10.16 ±0.20 (1.00x45°) 2.54 ±0.20 0.80 ±0.10 9.40 ±0.20 2.76 ±0.20 0.35 ±0.10 ø3.18 ±0.10 2.54TYP [2.54 ±0.20 2.54TYP [2.54 ±0.20 0.50 +0.10 –0.05 TO-220F 2014-6-27 9 www.kersemi.com KSM18N50V2/KSMF18N50V2