KSM15N65 KERSEMI | Alldatasheet

Document overview

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Technical content

Features

  • 15A, 650V, R DS(on) = 0.44Ω @V GS = 10 V
  • Low gate charge ( typical 48.5 nC)
  • L o w C rss ( typical 23.6 pF)
  • F a s t s w i t c h i n g
  • 100% avalanche tested
  • Improved dv/dt capability

Description

These N-Channel enhancement mode power field effect transis- tors are produced using Kersemi proprietary, planar stripe, DMOS technology. This advanced technology has be en especially tailored to mini - mize on-state resistance, prov ide superior switching perfor - mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi - cient switched mode power suppl ies and active power factor correction. TO-220 TO-220F D G S Absolute Maximum Ratings Symbol Parameter KSM15N65 KSMF15N65 Unit V DSS Drain-Source Voltage 650 V I D Drain Current - Continuous (T C = 25°C) - Continuous (T C = 100°C) 9.5 15* 9.5* A A I DM Drain Current - Pulsed (Note 1) 60 60* A V GSS Gate-Source voltage ± 30 V E AS Single Pulsed Avalanche Energy (Note 2) 637 mJ I AR Avalanche Current (Note 1) 15 A E AR Repetitive Avalanche Energy (Note 1) 25.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3)

4.5 V/ns

P D Power Dissipation (T C = 25°C) - Derate above 25°C 250 2.0 73.5 0.59 W W/°C T T STG Operating and Storage Temperature Range -55 to +150 °C T L Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 °C Thermal Characteristics Symbol Parameter KSM15N65 KSMF15N65 Unit R θJC Thermal Resistance, Junction-to-Case 0.5 1.7 °C/W R θCS Thermal Resistance, Case-to-Sink 0.5 -- °C/W R θJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W * Drain current limited by maximum junction termperature. KSM15N65 / KSMF15N65 2014-7-2 1 www.kersemi.com

Device Marking Device Package Reel Size Tape Width Quantity KSM15N65 KSM15N65 TO-220 -- -- 50 KSMF15N65 KSMF15N65 TO-220F -- -- 50

Electrical Characteristics

T C = 25°C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0V, I D = 250µA, T J = 25°C 650 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient I D = 250µA, Referenced to 25°C -- 0.65 -- V/°C I DSS Zero Gate Voltage Drain Current V DS = 650V, V GS = 0V V DS = 520V, T C = 125°C µA µA I GSSF Gate-Body Leakage Current, Forward V GS = 30V, V DS = 0V -- -- 100 nA I GSSR Gate-Body Leakage Current, Reverse V GS = -30V, V DS = 0V -- -- -100 nA On Characteristics V GS(th) Gate Threshold Voltage V DS = V GS , I D = 250µA 3.0 -- 5.0 V R DS(on) Static Drain-Source On-Resistance V GS = 10V, I D g FS Forward Transconductance V DS = 40V, I D = 7.5A (Note 4) -- 19.2 -- S Dynamic Characteristics C iss Input Capacitance V DS = 25V, V GS = 0V, f = 1.0MHz -- 2380 3095 pF C oss Output Capacitance -- 295 385 pF C rss Reverse Transfer Capacitance -- 23.6 35.5 pF Switching Characteristics t d(on) Turn-On Delay Time V DD = 325V, I D = 15A R G = 21.7Ω (Note 4, 5) -- 65 140 ns t r Turn-On Rise Time -- 125 260 ns t d(off) Turn-Off Delay Time -- 105 220 ns t f Turn-Off Fall Time -- 65 140 ns Q g Total Gate Charge V DS = 520V, I D = 15A V GS = 10V (Note 4, 5) -- 48.5 63.0 nC Q gs Gate-Source Charge -- 14.0 -- nC Q gd Gate-Drain Charge -- 21.2 -- nC Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- 15 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A V SD Drain-Source Diode Forward Voltage V GS = 0V, I S = 15A -- -- 1.4 V t rr Reverse Recovery Time V GS = 0V, I S = 15A dI F /dt =100A/µs (Note 4) -- 496 -- ns Q rr Reverse Recovery Charge -- 5.69 -- µC NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 5.23mH, I AS = 15A, V DD = 50V, R G = 25Ω, Starting T J = 25°C 3. I SD ≤ 15A, di/dt ≤ 200A/µs, V DD ≤ BV DSS , Starting T J = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2014-7-2 2 www.kersemi.com Package Marking and Ordering Information KSM15N65 / KSMF15N65

Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms KSM15N65 / KSMF15N65 2014-7-2 6 www.kersemi.com

Peak Diode Recovery dv/dt Test Circuit & Waveforms KSM15N65 / KSMF15N65 2014-7-2 7 www.kersemi.com

4.50 ±0.20 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.40 ±0.20 10.00 ±0.20 1.27 ±0.10 ø3.60 ±0.10 (8.70) 2.80 ±0.10 15.90 ±0.20 10.08 ±0.30 18.95MAX. (1.70) (3.70)(3.00) (1.46) (1.00) (45 9.20 ±0.20 13.08 ±0.20 1.30 ±0.10 1.30 +0.10 –0.05 0.50 +0.10 –0.05 2.54TYP [2.54 ±0.20 2.54TYP [2.54 ±0.20 TO-220 KSM15N65 / KSMF15N65 2014-7-2 8 www.kersemi.com

(Continued) (7.00) (0.70) MAX1.47 (30 3.30 ±0.10 15.80 ±0.20 15.87 ±0.20 6.68 ±0.20 9.75 ±0.30 4.70 ±0.20 10.16 ±0.20 (1.00x45°) 2.54 ±0.20 0.80 ±0.10 9.40 ±0.20 2.76 ±0.20 0.35 ±0.10 ø3.18 ±0.10 2.54TYP [2.54 ±0.20 2.54TYP [2.54 ±0.20 0.50 +0.10 –0.05 TO-220F KSM15N65 / KSMF15N65 2014-7-2 9 www.kersemi.com