KSM12N20L

KSM12N20L KERSEMI | Alldatasheet

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Technical content

Features

 11.6A, 200V, R DS(on) = 0.28Ω @V GS = 10 V  Low gate charge ( typical 16 nC)  Low Crss ( typical 17 pF)  Fast switching  100% avalanche tested  Improved dv/dt capability  Low level gate drive requirement allowing direct opration from logic drivers Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter KSM12N20L Units V DSS Drain-Source Voltage 200 V I D Drain Current - Continuous (T C = 25°C) 11.6 A - Continuous (T C = 100°C) 7.35 A I DM Drain Current - Pulsed (Note 1) 46.4 A V GSS Gate-Source Voltage ± 20 V E AS Single Pulsed Avalanche Energy (Note 2) 210 mJ I AR Avalanche Current (Note 1) 11.6 A E AR Repetitive Avalanche Energy (Note 1) 9.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3)

5.5 V/ns

P D Power Dissipation (T C = 25°C) 90 W - Derate above 25°C 0.72 W/°C T J , T STG Operating and Storage Temperature Range -55 to +150 °C T L Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units R θJC Thermal Resistance, Junction-to-Case -- 1.39 °C /W R θCS Thermal Resistance, Case-to-Sink 0.5 -- °C /W R θJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C /W S D G TO-220 2014-6-26 www.kesemi.com1

(Note 4) (Note 4, 5) (Note 4, 5) (Note 4) T C = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 2.3mH, I AS = 11.6A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C 3. I SD ≤ 11.6A, di/dt ≤ 300A/µs, V DD ≤ BV DSS, Starting T J = 25°C 4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0 V, I D = 250 µA 200 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient I D = 250 µA, Referenced to 25°C -- 0.14 -- V/°C I DSS Zero Gate Voltage Drain Current V DS = 200 V, V GS = 0 V -- -- 1 µA V DS = 160 V, T C I GSSF Gate-Body Leakage Current, Forward V GS = 20 V, V DS = 0 V -- -- 100 nA I GSSR Gate-Body Leakage Current, Reverse V GS = -20 V, V DS On Characteristics V GS(th) Gate Threshold Voltage V DS = V GS , I D = 250 µA 1.0 -- 2.0 V R DS(on) Static Drain-Source On-Resistance V GS = 10 V, I D = 5.8 A V GS = 5 V, I D = 5.8 A -- 0.22 0.25 0.28 0.32 Ω g FS Forward Transconductance V DS = 30 V, I D Dynamic Characteristics C iss Input Capacitance V DS = 25 V, V GS = 0 V, f = 1.0 MHz -- 830 1080 pF C oss Output Capacitance -- 120 155 pF C rss Reverse Transfer Capacitance -- 17 22 pF Switching Characteristics t d(on) Turn-On Delay Time V DD = 100 V, I D = 11.6 A, R G = 25 Ω -- 15 40 ns t r Turn-On Rise Time -- 190 390 ns t d(off) Turn-Off Delay Time -- 60 130 ns t f Turn-Off Fall Time -- 120 250 ns Q g Total Gate Charge V DS = 160 V, I D = 11.6 A, V GS = 5 V -- 16 21 nC Q gs Gate-Source Charge -- 2.8 -- nC Q gd Gate-Drain Charge -- 7.6 -- nC Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- 11.6 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 46.4 A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S t rr Reverse Recovery Time V GS = 0 V, I S = 11.6 A, dI F / dt = 100 A/µs -- 128 -- ns Q rr Reverse Recovery Charge -- 0.56 -- µC

Electrical Characteristics

2014-6-26 www.kesemi.com2

V GS Q g Q gs Q gd 3mA V GS DUT V DS 300nF 50KΩ 200nF12V Same Type as DUT Charge V GS Q g Q gs Q gd 3mA V GS DUT V DS 300nF 50KΩ 200nF12V Same Type as DUT V GS V DS 10% 90% t d(on) t r t on t off t d(off) t f V DD V DS R L DUT R G V GS V GS V DS 10% 90% t d(on) t r t on t off t d(off) t f V DD V DS R L DUT R G V GS E AS =L I AS ----2 BV DSS DD BV DSS V DD V DS BV DSS t p V DD I AS V DS (t) I D (t) Time 10V DUT R G L I D t p E AS =L I AS ----2 AS =L I AS ----2 1----2 BV DSS DD BV DSS V DD V DS BV DSS t p V DD I AS V DS (t) I D (t) Time 10V DUT R G L L I D I D t p Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms KSM12N20L 2014-6-26 www.kesemi.com5

Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT V DS Driver R G Same Type as DUT V GS  dv/dt controlled by R G SD controlled by pulse period V DD L I SD 10V V GS ( Driver ) I SD ( DUT ) V DS ( DUT ) V DD Body Diode Forward Voltage Drop V SD I FM , Body Diode Forward Current Body Diode Reverse Current I RM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT V DS Driver R G Same Type as DUT V GS  dv/dt controlled by R G SD controlled by pulse period V DD L L I SD 10V V GS ( Driver ) I SD ( DUT ) V DS ( DUT ) V DD Body Diode Forward Voltage Drop V SD I FM , Body Diode Forward Current Body Diode Reverse Current I RM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width KSM12N20L 2014-6-26 www.kesemi.com6

4.50 ±0.20 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.40 ±0.20 10.00 ±0.20 1.27 ±0.10 ø3.60 ±0.10 (8.70) 2.80 ±0.10 15.90 ±0.20 10.08 ±0.30 18.95MAX. (1.70) (3.70)(3.00) (1.46) (1.00) (45 9.20 ±0.20 13.08 ±0.20 1.30 ±0.10 1.30 +0.10 –0.05 0.50 +0.10 –0.05 2.54TYP [2.54 ±0.20 2.54TYP [2.54 ±0.20 TO-220 KSM12N20L 2014-6-26 www.kesemi.com7