KSM10N50CF KERSEMI | Alldatasheet

Document overview

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Technical content

Features

  • 10A, 500V, R DS(on) = 0.61 Ω @V GS = 10 V
  • Low gate charge (typical 43 nC)
  • Low Crss (typical 16pF)
  • F a s t s w i t c h i n g
  • 100% avalanche tested
  • Improved dv/dt capability
  • Fast recovery body diode

Description

These N-Channel enhancement mode power field effect transis- tors are produced using kersemi proprietary, planar stripe, DMOS technology. This advanced technology has be en especially tailored to mini- mize on-state resistance, prov ide superior switching perfor- mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi- cient switched mode power suppl ies and active power factor correction. Absolute Maximum Ratings *Drain current limited by maximum junction temperature Thermal Characteristics TO-220 D G S TO-220F Symbol Parameter V DSS Drain-Source Voltage 500 V I D Drain Current - Continuous (T C = 25°C) 10 10* A - Continuous (T C I DM Drain Current - Pulsed (Note 1) 40 40* A V GSS Gate-Source voltage ± 30 V E AS Single Pulsed Avalanche Energy (Note 2) 388 mJ I AR Avalanche Current (Note 1) 10 A E AR Repetitive Avalanche Energy (Note 1) 14.3 mJ dv/dt Peak Diode Recovery dv/dt (Note 3)

4.5 V/ns

P D Power Dissipation (T C = 25°C) 143 48 W - Derate above 25°C1 . 1 4 0 . 3 8 W / °C T T STG Operating and Storage Temperature Range -55 to +150 °C T L Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 °C Symbol Parameter R θJC Thermal Resistance, Junction-to-Case 0.87 2.58 °C/W R θJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W KSM10N50CF/KSMF10N50CF KSM10N50CF KSMF10N50CF Units KSM10N50CF KSMF10N50CF Unit 2014-6-29 1 www.kersemi.com

Electrical Characteristics

T C = 25°C unless otherwise noted Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 7mH, I AS = 10A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C 3. I SD ≤ 10A, di/dt ≤ 200A/µs, V DD ≤ BV DSS, Starting T J = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Device Marking Device Package Reel Size Tape Width Quantity TO-220 - - 50 TO-220F - - 50 Symbol Parameter Conditions Min Typ Max Units Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0V, I D = 250µA, T J = 25°C 500 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient I D = 250µA, Referenced to 25°C- - 0 . 5 - - V / °C I DSS Zero Gate Voltage Drain Current V DS = 500V, V GS = 0V -- -- 10 µA V DS = 400V, T C I GSSF Gate-Body Leakage Current, Forward V GS = 30V, V DS = 0V -- -- 100 nA I GSSR Gate-Body Leakage Current, Reverse V GS = -30V, V DS = 0V -- -- -100 nA On Characteristics V GS(th) Gate Threshold Voltage V DS = V GS , I D = 250µA2 . 0 - - 4 . 0 V R DS(on) Static Drain-Source On-Resistance V GS = 10V, I D = 5A -- 0.5 0.61 Ω g FS Forward Transconductance V DS = 40V, I D = 5A (Note 4) -- 15 -- S Dynamic Characteristics C iss Input Capacitance V DS = 25V, V GS = 0V, f = 1.0MHz -- 1610 2096 pF C oss Output Capacitance -- 177 230 pF C rss Reverse Transfer Capacitance -- 16 24 pF Switching Characteristics t d(on) Turn-On Delay Time V DD = 250V, I D = 10A R G = 25Ω (Note 4, 5) -- 29 67 ns t r Turn-On Rise Time -- 80 170 ns t d(off) Turn-Off Delay Time -- 141 290 ns t f Turn-Off Fall Time -- 80 165 ns Q g Total Gate Charge V DS = 400V, I D = 10A V GS = 10V (Note 4, 5) -- 43 56 nC Q gs Gate-Source Charge -- 7.5 -- nC Q gd Gate-Drain Charge -- 18.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- 10 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 40 A V SD Drain-Source Diode Forward Voltage V GS = 0V, I S = 10A -- -- 1.4 V t rr Reverse Recovery Time V GS = 0V, I S = 10A dI F /dt =100A/µs (Note 4) -- 50 ns Q rr Reverse Recovery Charge -- 0.1 -- µC KSM10N50CF KSM10N50CF KSMF10N50CF KSMF10N50CF Package Marking and Ordering Information KSM10N50CF/KSMF10N50CF 2014-6-29 2 www.kersemi.com

Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms KSM10N50CF/KSMF10N50CF 2014-6-29 6 www.kersemi.com

Peak Diode Recovery dv/dt Test Circuit & Waveforms KSM10N50CF/KSMF10N50CF 2014-6-29 7 www.kersemi.com

4.50 ±0.20 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.40 ±0.20 10.00 ±0.20 1.27 ±0.10 ø3.60 ±0.10 (8.70) 2.80 ±0.10 15.90 ±0.20 10.08 ±0.30 18.95MAX. (1.70) (3.70)(3.00) (1.46) (1.00) (45 9.20 ±0.20 13.08 ±0.20 1.30 ±0.10 1.30 +0.10 –0.05 0.50 +0.10 –0.05 2.54TYP [2.54 ±0.20 2.54TYP [2.54 ±0.20 TO-220 KSM10N50CF/KSMF10N50CF 2014-6-29 8 www.kersemi.com

(Continued) (7.00) (0.70) MAX1.47 (30 3.30 ±0.10 15.80 ±0.20 15.87 ±0.20 6.68 ±0.20 9.75 ±0.30 4.70 ±0.20 10.16 ±0.20 (1.00x45°) 2.54 ±0.20 0.80 ±0.10 9.40 ±0.20 2.76 ±0.20 0.35 ±0.10 ø3.18 ±0.10 2.54TYP [2.54 ±0.20 2.54TYP [2.54 ±0.20 0.50 +0.10 –0.05 TO-220F KSM10N50CF/KSMF10N50CF 2014-6-29 9 www.kersemi.com