KSM032N08 KERSEMI | Alldatasheet

Document overview

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Technical content

Features

DS(on) = 2.5mΩ ( Typ.)@ V GS = 10V, I D = 75A

  • Fast switching speed
  • Low gate charge
  • High performance trench tec hnology for extremely low R DS(on)
  • High power and current handling capability
  • RoHS compliant

Description

This N-Channel MOSFET is pr oduced using Kersemi Semicon- ductor’s adcanced PowerTrench process that has been espe- cially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application

  • DC to DC convertors / Synchronous Rectification D G S TO-220 MOSFET Maximum Ratings T C = 25 o C unless otherwise noted* Thermal Characteristics Symbol Parameter KSM032N08 Units V DSS Drain to Source Voltage 75 V V GSS Gate to Source Voltage ±20 V I D Drain Current - Continuous (T C = 25 o C, Silicon Limited) - Continuous (T C = 100 o C, Silicon Limited) - Continuous (T C = 25 o 235* A 165* A 120 A I DM D r a i n C u r r e n t - P u l s e d (Note 1) 940 A E AS Single Pulsed Avalanche Energy (Note 2) 1995 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P D Power Dissipation (T C = 25 o C) 375 W - Derate above 25 o C2 . 5 W / o C T J , T STG Operating and Storage Temperature Range -55 to +175 o C T L Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 o C Symbol Parameter Ratings Units R θJC Thermal Resistance, Junction to Case 0.4 o C/WR θCS Thermal Resistance, Case to Sink Typ. 0.5 R θJA Thermal Resistance, Junction to Ambient 62.5 Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. 2014-7-2 1 www.kersemi.com

T C = 25 o C unless otherwise noted

Electrical Characteristics

Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity KSM032N08 KSM032N08 TO-220 - - 50 Symbol Parameter Test Conditions Min. Typ. Max. Units BV DSS Drain to Source Breakdown Voltage I D = 250µA, V GS = 0V, T C = 25 o C7 5 - - V ∆BV DSS J Breakdown Voltage Temperature Coefficient I D = 250µA, Referenced to 25 o C - 0.05 - V/ o C I DSS Zero Gate Voltage Drain Current V DS = 75V, V GS = 0V - - 1 µAV DS = 75V, T C = 150 o C - - 500 I GSS Gate to Body Leakage Current V GS = ±20V, V DS = 0V - - ±100 nA V GS(th) Gate Threshold Voltage V GS = V DS , I D = 250µA2 . 5 3 . 5 4 . 5 V R DS(on) Static Drain to Source On Resistance V GS = 10V, I D = 75A - 2.5 3.2 m Ω g FS Forward Transconductance V DS = 10V, I D = 75A (Note 4) - 180 - S C iss Input Capacitance V DS = 25V, V GS = 0V f = 1MHz - 11400 15160 pF C oss Output Capacitance - 1360 1810 pF C rss Reverse Transfer Capacitance - 595 800 pF Q g(tot) Total Gate Charge at 10V V DS = 60V, I D = 75A V GS = 10V (Note 4, 5) - 169 220 nC Q gs Gate to Source Gate Charge - 60 - nC Q gd Gate to Drain “Miller” Charge - 47 - nC t d(on) Turn-On Delay Time V DD = 37.5V, I D = 75A R GEN = 25Ω, V GS = 10V (Note 4, 5) - 230 470 ns t r Turn-On Rise Time - 191 392 ns t d(off) Turn-Off Delay Time - 335 680 ns t f Turn-Off Fall Time - 121 252 ns I S Maximum Continuous Drain to Source Diode Forward Current - - 235 A I SM Maximum Pulsed Drain to Source Diode Forward Current - - 940 A V SD Drain to Source Diode Forward Voltage V GS = 0V, I SD = 75A - - 1.3 V t rr Reverse Recovery Time V GS = 0V, I SD = 75A dI F /dt = 100A/µs (Note 4) -5 3- n s Q rr Reverse Recovery Charge - 77 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.71mH, I AS = 75A, V DD = 50V, R G = 25Ω, Starting T J = 25°C 3. I SD ≤ 75A, di/dt ≤ 200A/µs, V DD ≤ BV DSS , Starting T J = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Package Marking and Ordering Information KSM032N08 2014-7-2 2 www.kersemi.com

Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms KSM032N08 2014-7-2 5 www.kersemi.com

Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT V DS Driver R G Same Type as DUT V GS

  • dv/dt controlled by R G SD controlled by pulse period V DD L I SD 10V V GS ( Driver ) I SD ( DUT ) V DS ( DUT ) V DD Body Diode Forward Voltage Drop V SD I FM , Body Diode Forward Current Body Diode Reverse Current I RM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT V DS Driver R G Same Type as DUT V GS
  • dv/dt controlled by R G SD controlled by pulse period V DD L L I SD 10V V GS ( Driver ) I SD ( DUT ) V DS ( DUT ) V DD Body Diode Forward Voltage Drop V SD I FM , Body Diode Forward Current Body Diode Reverse Current I RM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width KSM032N08 2014-7-2 6 www.kersemi.com

4.50 ±0.20 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.40 ±0.20 10.00 ±0.20 1.27 ±0.10 ø3.60 ±0.10 (8.70) 2.80 ±0.10 15.90 ±0.20 10.08 ±0.30 18.95MAX. (1.70) (3.70)(3.00) (1.46) (1.00) (45 9.20 ±0.20 13.08 ±0.20 1.30 ±0.10 1.30 +0.10 –0.05 0.50 +0.10 –0.05 2.54TYP [2.54 ±0.20 2.54TYP [2.54 ±0.20 TO-220 KSM032N08 2014-7-2 7 www.kersemi.com