K2865

K2865 KERSEMI | Alldatasheet

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Technical content

Chopper Regulator, DC/DC Converter and Motor Drive

Applications

z Low drain −source ON-resistance : R DS (ON) = 4.2 Ω (typ.) z High forward transfer admittance : |Y fs | = 1.7 S (typ.) z Low leakage current : I DSS = 100 μA (max) (V DS = 600 V) z Enhancement mode : V th = 2.0~4.0 V (V DS = 10 V, I D = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain−source voltage V DSS 600 V Drain−gate voltage (R GS = 20 kΩ) V DGR 600 V Gate−source voltage V GSS ±30 V DC (Note 1) I D A Pulse (t = 1 ms) (Note 1) I DP A Drain current Pulse (t = 100 μs) (Note 1) I DP 8 A Drain power dissipation (Tc = 25°C) P D 20 W Single-pulse avalanche energy (Note 2) E AS 93 mJ Avalanche current I AR 2 A Repetitive avalanche energy (Note 3) E AR 2 mJ Channel temperature T ch 150 °C Storage temperature range T stg −55~150 °C Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case R th (ch−c) 6.25 °C / W Thermal resistance, channel to ambient R th (ch−a) 125 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: V DD = 90 V, T ch = 25°C (initial), L = 41 mH, R G = 25 Ω, I AR = 2 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature Unit: mm JEDEC ― JEITA SC-64 TOSHIBA 2-7B1B Weight: 0.36 g (typ.) JEDEC ― JEITA SC-64 TOSHIBA 2-7J1B Weight: 0.36 g (typ.)

Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±25 V, V DS = 0 V — — ±10 μA Gate−source breakdown voltage V (BR) GSS I G = ±10 μA, V DS = 0 V ±30 — — V Drain cutoff current I DSS V DS = 600 V, V GS = 0 V — — 100 μA Drain−source breakdown voltage V (BR) DSS I D = 10 mA, V GS = 0 V 600 — — V Gate threshold voltage V th V DS = 10 V, I D = 1 mA 2.0 — 4.0 V Drain−source ON-resistance R DS (ON) V GS = 10 V, I D = 1 A — 4.2 5.0 Ω Forward transfer admittance |Y fs | V DS = 10 V, I D = 1 A 0.8 1.7 — S Input capacitance C iss — 380 — Reverse transfer capacitance C rss — 40 — Output capacitance C oss V DS = 10 V, V GS = 0 V, f = 1 MHz — 120 — pF Rise time t r — 15 — Turn−on time t on — 25 — Fall time t f — 20 — Switching time Turn−off time t off — 80 — ns Total gate charge (gate−source plus gate−drain) Q g — 9 — Gate−source charge Q gs — 5 — Gate−drain (“Miller”) charge Q gd V DD ≈ 480 V, V GS = 10 V, I D = 2 A — 4 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) I DR — — — 2 A I DRP t = 1 ms — — 5 A Pulse drain reverse current (Note 1) I DRP t = 100 μs — — 8 A Forward voltage (diode) V DSF I DR = 2 A, V GS = 0 V — — −1.5 V Reverse recovery time t rr — 1000 — ns Reverse recovery charge Q rr I DR = 2 A, V GS = 0 V dI DR / dt = 100 A / μs — 3.5 — μC Marking K2865 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code)