IPD082N10N3G BYCHIP | Alldatasheet
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Features
VDS= 100V, ID= 78 A RDS(ON) < 9.0mΩ @ VGS = 10V RDS(ON) < 12 mΩ @ VGS =4.5V
- Advanced Trench Technology
- Provide Excellent RDS(ON) and Low Gate Charge
- Lead Free and Green Available 100% UIS TESTED! 100% ΔVds TESTED! General Features www.bychip.cn Pin Assignment TO-252-2L Top View Schematic Diagram IPD082N10N3G v1.0
Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 100 - V Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.2 3 V VGS=10V, ID=39A - 9.0 mΩ Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=39A - 12 mΩ Forward Transconductance gFS VDS=10V,ID=39A 40 - - S Dynamic Characteristics (Note4) Input Capacitance Clss - 4200 5480 PF Output Capacitance Coss - 354 425 PF Reverse Transfer Capacitance Crss VDS=50V,VGS=0V, F=1.0MHz - 23 30 PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 15 - nS Turn-on Rise Time tr - 10 - nS Turn-Off Delay Time td(off) - 41 - nS Turn-Off Fall Time tf VDD=50V,ID=39A VGS=10V,RG=4.7Ω - 6 - nS Total Gate Charge Qg - 65 nC Gate-Source Charge Qgs - 15.3 nC Gate-Drain Charge Qgd VDS=50V,ID=39A, VGS=10V - 9 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=78A - 1.2 V Diode Forward Current (Note 2) IS - - 78 A Reverse Recovery Time trr - 101 nS Reverse Recovery Charge Qrr TJ = 25°C, IF = IS di/dt = 100A/μs(Note3) - 193 nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition : Tj=25 ,V℃ DD=50V,VG=10V,L=0.5mH,Rg=25Ω www.bychip.cn IPD082N10N3G v2.0