IPD060N03LG

IPD060N03L EVVOSEMI | Alldatasheet

Document overview

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• PDF pages: 8

Technical content

Features

• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Avalanche rated
• Pb-free plating Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D V GS=10 V, T C=25 °C 50 A V GS=10 V, T C=100 °C 50 V GS=4.5 V, T C=25 °C 50 V GS=4.5 V, T C=100 °C 43 Pulsed drain current2) I D,pulse T C=25 °C 350 Avalanche current, single pulse3) I AS T C=25 °C 50 Avalanche energy, single pulse E AS I D=20 A, R GS=25 Ω 60 mJ Reverse diode dv /dt dv /dt I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C 6 kV/µs Gate source voltage V GS ±20 V Value Product Summary IPD060N03L 30V N-Channel MOSFET Rev:2023A2 1 VDS (V) = 30V ID = 50A (VGS = 10V) R DS(ON) <6m Ω (VGS = 10V)

Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Power dissipation P tot T C=25 °C 56 W Operating and storage temperature T j, T stg -55 ... 175 °C IEC climatic category; DIN IEC 68-1 55/175/56 min. typ. max. Thermal resistance, junction - case R thJC - - 2.7 K/W SMD version, device on PCB R thJA minimal footprint - - 75 6 cm² cooling area4) -- 5 0 Electrical characteristics, at T j=25 °C, unless otherwise specified Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 30 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=250 µA 1 - 2.2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.1 1 µA V DS=30 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA R DS(on) V GS=4.5 V, I D=30 A - 7.2 9 mΩ V GS=10 V, I D=30 A -56 Gate resistance R G - 1.4 - Ω Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=30 A 34 67 - S 5) Measured from drain tab to source pin Value 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Drain-source on-state resistance5) 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Rev:2023A2 2 IPD060N03L 30V N-Channel MOSFET Static characteristics

Parameter Symbol Conditions Unit min. typ. max. Input capacitance C iss - 1700 2300 pF Output capacitance C oss - 640 850 Reverse transfer capacitance Crss -3 5 5 2 Turn-on delay time t d(on) -5- n s Rise time t r -3- Turn-off delay time t d(off) -2 0- Fall time t f -3- Gate to source charge Q gs - 5.6 - nC Gate charge at threshold Q g(th) - 2.8 - Gate to drain charge Q gd - 2.5 - Switching charge Q sw - 5.3 - Gate charge total Q g - 10.8 14.4 Gate plateau voltage V plateau - 3.2 - V Gate charge total Q g V DD=15 V, I D=30 A, V GS=0 to 10 V -2 2 3 0 Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 4.5 V - 9.4 - nC Output charge Q oss V DD=15 V, V GS=0 V -1 7- Diode continuous forward current I S - - 50 A Diode pulse current I S,pulse - - 350 Diode forward voltage V SD V GS=0 V, I F=30 A, T j=25 °C - 0.88 1.1 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/µs - - 10 nC T C=25 °C Values V GS=0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D=30 A, R G=1.6 Ω V DD=15 V, I D=30 A, V GS=0 to 4.5 V Rev:2023A2 3 IPD060N03L 30V N-Channel MOSFET Gate Charge Characteristics6) Reverse Diode

1 Power dissipation 2 Drain current

P tot=f(T C) I D=f(T C); V GS≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 10 ms DC 10210110010-1 103 102 101 100 10-1 V DS [V] I D [A] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10010-110-210-310-410-510-6 0.01 0.1 0000001 t p [s] Z thJC [K/W] 0 50 100 150 200 T C [°C] P tot [W] 0 50 100 150 200 T C [°C] I D [A] Rev:2023A2 4 IPD060N03L 30V N-Channel MOSFET

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 3 V 3.2 V 3.5 V 4 V 4.5 V 5 V 10 V 11.5 V 0 2 04 06 08 0 1 0 0 I D [A] R DS(on) [mΩ ] 25 °C 175 °C 100 012345 V GS [V] I D [A] 100 0 2 04 06 08 0 1 0 0 I D [A] g fs [S] 2.8 V 3 V 3.2 V 3.5 V 4 V 4.5 V 5 V 10 V 100 120 0123 V DS [V] I D [A] Rev:2023A2 5 IPD060N03L 30V N-Channel MOSFET

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=30 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=250 µA 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ 98 % -60 -20 20 60 100 140 180 T j [°C] R DS(on) [mΩ ] 0.5 1.5 2.5 -60 -20 20 60 100 140 180 T j [°C] V GS(th) [V] Ciss Coss Crss 104 103 102 101 10 100 1000 10000 0 5 10 15 20 25 30 V DS [V] C [pF] 25 °C 175 °C 25 °C, 98% 175 °C, 98% 100 1000 V SD [V] I F [A] Rev:2023A2 6 IPD060N03L 30V N-Channel MOSFET

13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA -60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V] V GS Q gate V gs(t h ) Q g(th) Q gs Q gd Q sw Q g 25 °C100 °C150 °C 10310210110010-1 100 t AV [µs] I AV [A] 6 V 15 V 24 V 0 5 10 15 20 25 30 Q gate [nC] V GS [V] Rev:2023A2 7 IPD060N03L 30V N-Channel MOSFET

Rev:2023A2 8 TO-252

Ordering information

Ordercode Package Baseqty Deliverymode

2500 Tape and reel

Millimeters InchesRef. A B C D E G H L 2.10 0.66 0.40 2.50 0.10 0.86 0.60 0.083 0.026 0.016 0.098 0.004 0.034 0.024 6.40 9.50 10.70 0.374 0.421 0.053 0.065 5.90 6.30 0° 6° 0.232 0.248 6.80 0.252 0.268 4.47 4.67 0.176 0.184 1.09 1.21 0.043 0.048 1.35 1.65 0° 6° B2 5.18 5.48 0.202 0.216 C2 0.44 0.58 0.017 0.023 5.30REF 4.63 0.182 0.209REF E H B G L DETAIL A DETAIL A A C D IPD060N03L 30V N-Channel MOSFETPackage Mechanical Data TO-252 IPD060N03LG