IPD048N06L3G BYCHIP | Alldatasheet
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VDS= 60V, ID= 50A RDS(ON) < 12 mΩ @ VGS = 10V RDS(ON) < 16 mΩ @ VGS =4.5V
- Advanced Trench Technology
- Provide Excellent RDS(ON) and Low Gate Charge
- Lead Free and Green Available 100% UIS TESTED! 100% ΔVds TESTED! General Features Pin Assignment TO-252-2L Top View Schematic Diagram www.bychip.cn IPD048N06L3G v1.0
ElectricalCharacteristics(T C=25℃unlessotherwise noted) Parameter Symbol Condition Min Typ Max Unit OffCharacteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 60 - - V Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA OnCharacteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.0 3.0 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=20A - 12 mΩ VGS=4.5V, ID=20A - 16 mΩ Forward Transconductance gFS VDS=5V,ID=20A 18 - - S Dynamic Characteristics(Note4) Input Capacitance Clss VDS=30V,VGS=0V, F=1.0MHz - 1630 - PF Output Capacitance Coss - 113 - PF Reverse Transfer Capacitance Crss - 97 - PF Switching Characteristics(Note 4) Turn-on Delay Time td(on) VDD=30V, RL=6.7Ω VGS=5V,RG=3Ω - 15 - nS Turn-on Rise Time tr - 20 - nS Turn-Off Delay Time td(off) - 120 - nS Turn-Off Fall Time tf - 15.6 - nS Turn-on Delay Time td(on) VDD=30V, RL=6.7Ω VGS=10V,RG=3Ω - 7.4 - nS Turn-on Rise Time tr - 5.1 - nS Turn-Off Delay Time td(off) - 28.2 - nS Turn-Off Fall Time tf - 5.5 - nS Total Gate Charge Qg VDS=30V,ID=20A, VGS=10V - 39 nC Gate-Source Charge Qgs - 7 nC Gate-Drain Charge Qgd - 8.5 nC Drain-SourceDiodeCharacteristics Diode Forward Voltage(Note 3) VSD VGS=0V,IS=20A - 1.2 V Diode Forward Current(Note 2) IS - - 50 A Reverse Recovery Time trr TJ = 25°C, IF =20A di/dt = 100A/μs(Note3) - 28 - nS Reverse Recovery Charge Qrr - 40 - nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature. 2.Surface Mounted on FR4 Board, t ≤ 10 sec. 3.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4.Guaranteed by design, not subject to production 5.EAS condition : Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω www.bychip.cn IPD048N06L3G v2.0
Typical Electricaland Thermal Characteristics(Curves) Vds Drain-Source Voltage (V) Figure1Output Characteristics Vgs Gate-Source Voltage (V) Figure2 TransferCharacteristics ID- Drain Current (A) Figure3Rdson- Drain Current TJ-Junction Temperature(℃) Figure4Rdson-Junction Temperature Qg Gate Charge (nC) Figure5GateCharge Vsd Source-Drain Voltage (V) Figure6 Source- DrainDiodeForward Rdson On-Resistance(mΩ) ID- Drain Current (A) ID- Drain Current (A) Normalized On-ResistanceVgs Gate-Source Voltage (V)Is- Reverse Drain Current (A) www.bychip.cn IPD048N06L3G v3.0