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□ VDS =600V,ID =10A □ RDS(ON)：730MΩ@VGS=10V □ Low gatecharge. □ Green deviceavailable. □ AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON) □ Excellentpackageforgoodheatdissipation. Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Continuous Drain Current1 10 A Continuous Drain Current-T C=100℃1 3.4 EAS Single Pulse Avalanche Energy1 520 mJ PD Power Dissipation(Tc=25℃) 156 W TJ, TSTG Operating and Storage Junction Temperature Range -55~+150 ℃ Thermal Characteristics Symbol Parameter Ratings Units RƟJC Thermal Resistance,Junction to Case 0.8 ℃/W RƟJA Thermal Resistance,Junction to Ambient 62.5
2017 . H1.0 Page 2 www.hldic.com Package Marking and Ordering Information Part NO. Marking Package HLDP10N60 HLDP10N60 TO-220 Electrical Characteristics (TC=25℃unless otherwise noted) Notes: 1.Repetitive Rating: Pulse widthlimited bymaximum junction temperature. 2.Surface Mounted on FR4 Board, t ≤ 10 sec. 3.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤2 %. 4.Guaranteed by design, not subject toproduction Symbo l Parameter Conditions Mi n Ty p Max Unit s Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0, ID=250μA 600 - - V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=600V - - 1 μA IGSS Gate-Source Leakage Current VGS=±30V, VDS=0V - - ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 - 4 V RDS(ON) Drain-Source On Resistance2 VGS=10V,ID=5A - - 0.73 Ω Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0, f=1.0MHz - 1570 2040 pF Coss Output Capacitance - 166 215 Crss Reverse Transfer Capacitance - 18 24 Switching Characteristics td(on) Turn-On D elay Time VDD=300V, ID=10A RG=25Ω(Note3,4) - 23 55 ns tr Rise Time - 66 150 ns td(off) Turn-Off Delay Time - 144 300 ns tf Fall Time - 77 165 ns Qg Total Gate Charge VGS=480V, VGS=10V, ID=10 A(Note3,4) - 44 57 nC Qgs Gate-Source Charge - 6.7 - nC Qgd Gate-Drain “Miller” Charge - 18.5 - nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage2 ID=8A - - 1.4 V trr Reverse Recovery Time IS=9,VGS=0V di/dt=100A/Μs (Note3) - 550 - ns Qrr Reverse Recovery Charge - 6.5 - nC
2017 . H1.0 Page 3 www.hldic.com Typical Characteristics TJ=25℃ unless otherwise noted
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