HLDG110N06 HUILIDA | Alldatasheet
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□ VDS =55V,ID =110A □ RDS(ON)<5mΩ@VGS=10V □ Low gatecharge. □ Green deviceavailable. □ AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON). □ Excellentpackageforgoodheatdissipation. Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source Voltage (VGS=0V) 55 V VGS Gate-Source Voltage (VDS=0V) ±25 V ID (DC) Drain Current (DC) at Tc=25℃ 110 A ID (DC) Drain Current (DC) at Tc=100℃ 74 A IDM (pluse) Drain Current-Continuous@ Current-Pulsed (Note 1) 420 A PD Maximum Power Dissipation(Tc=25℃) 160 W Derating Factor 0.926 W/℃ EAS Single Pulse Avalanche Energy (Note 2) 870 mJ TJ,TSTG Operating Junction and Storage Temperature Range -55 To 175 ℃ Symbol Parameter Value Unit RθJC Thermal Resistance,Junction-to-Case 1.08 ℃/W
2016 Mar. V1.0 Page 2 www.hldic.com Package Marking and Ordering Information Part NO. Marking Package HLDG110N06 HLDG11N06 TO-247 Electrical Characteristics (TC=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/OSfftates BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 55 V IDSS Zero Gate Voltage Drain Current(Tc=25 ℃) VDS=55V,VGS=0V 1 μA IDSS Zero Gate Voltage Drain Current(Tc=125 ℃) VDS=55V,VGS=0V 1 μA IGSS Gate-Body LeakageCurrent VGS=±20V,VDS=0V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 2 4 V RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=40A 4.1 5.0 mΩ Dynamic Characteristics gFS Forward Transconductance VDS=25V,ID=40A 18 S Ciss Input Capacitance VDS=25V,VGS=0V, f=1.0MHz 3880 PF Coss Output Capacitance 500 PF Crss Reverse Transfer Capacitance 234 PF Qg Total Gate Charge VDS=30V,ID=30A, VGS=10V 94 nC Qgs Gate-Source Charge 18 nC Qgd Gate-Drain Charge 25 nC Switching Times td(on) Turn-on Delay Time VDD=30V,ID=2A,RL=15Ω VGS=10V,RG=2.5Ω 15 nS tr Turn-on Rise Time 18 nS td(off) Turn-Off Delay Time 31 nS tf Turn-Off Fall Time 38 nS Source-Drain Diode Characteristics ISD Source-drain Current(Body Diode) 105 A ISDM Pulsed Source-Drain Current(Body Diode) 420 A VSD Forward On Voltage(Note 1) TJ=25℃,ISD=40A,VGS=0V 0.87 0.95 V trr Reverse Recovery Time(Note 1) TJ=25℃,IF=75A di/dt=100A/μs 56 nS Qrr Reverse Recovery Charge(Note 1) 113 nC ton Forward Turn-on Time Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 se c. 3. Pulse Test: Pulse W idth ≤ 300μs, Duty Cycle ≤ 2 % . 4. Guaranteed by design, not subject toproduction 5. EAS condition : TJ=25℃,VDD=40V,V =10V,RG=25
2016 Mar. V1.0 Page 3 www.hldic.com Test Circuit 1) EAS Test Circuits 2) Gate Charge Test Circuit: 3) Switch Time Test Circuit：
2016 Mar. V1.0 Page 4 www.hldic.com Normalized On-Resistance TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) Figure1. Output Characteristics Figure2. Transfer Characteristics VDS Drain-Source Voltage (V) Figure3. Rdson Vs Drain Current VGS Gate-Source Voltage (V) Figure4. Rdson Vs Junction Temperature ID- Drain Current (A) Figure5. Gate Charge TJ-Junction Temperature(℃) VSD Source-Drain Voltage (V) Figure6. Source- Drain Diode Forward VGS Gate-Source Voltage (V) RDS(ON) On-Resistance (mΩ) ID-Drain Current (A) ID-Drain Current (A)
2016 Mar. V1.0 Page 5 www.hldic.com Figure7. Capacitance vs Vds Figure8. Safe Operation Area VDS Drain-Source Voltage (V) VDS Drain-Source Voltage (V) Figure9. BVDSS vs Junction Temperature Figure10. VGS(th) vs Junction Temperature TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure11. Normalized Maximum Transient Thermal Impedance Crss Ciss Coss Normalized BVDSS C Capacitance (pF) R(t), Normalized Effective Transient Thermal Impedance ID-Drain Current (A)
2016 Mar. V1.0 Page 6 www.hldic.com