HLDF8N60 HUILIDA | Alldatasheet
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□ VDS =600V,ID =7.5A □ RDS(ON)：1.25Ω@VGS=10V □ Low gatecharge. □ Green deviceavailable. □ AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON) □ Excellentpackageforgoodheatdissipation. Absolute Maximum Ratings (TC=25℃unless otherwise noted) Thermal Characteristic Symbol Parameter Ratings Units VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Continuous Drain Current1 7.5 A Continuous Drain Current-T C=100℃1 5 EAS Single Pulse Avalanche Energy1 420 mJ PD Power Dissipation(Tc=25℃) 155 W TJ, TSTG Operating and Storage Junction Temperature Range -55~+150 ℃ Symbol Parameter Ratings Units RƟJC Thermal Resistance,Junction to Case 0.88 ℃/W RƟJA Thermal Resistance,Junction to Ambient 62.5
2017 Mar. V1.0 Page 2 www.hldic.com Package Marking and Ordering Information Part NO. Marking Package HLDF8N60 HLDF8N60 TO-220F Electrical Characteristics (TC=25℃unless otherwise noted) Notes: 1.Repetitive Rating: Pulse widthlimited bymaximum junction temperature. 2.Surface Mounted on FR4 Board, t ≤ 10 sec. . Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤2 %. 4.Guaranteed by design, not subject toproduction Symbo l Parameter Conditions Mi n Ty p Max Unit s Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0, ID=250μA 600 - - V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=600V - - 10 μA IGSS Gate-Source Leakage Current VGS=±30V, VDS=0V - - ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 - 4 V RDS(ON) Drain-Source On Resistance2 VGS=10V,ID=3.7A - - 1.25 Ω Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0, f=1.0MHz - 1100 1430 pF Coss Output Capacitance - 135 175 Crss Reverse Transfer Capacitance - 16 21 Switching Characteristics td(on) Turn-On Delay Time VDD=300V, ID=7.5A RG=25Ω(Note3,4) - 30 70 ns tr Rise Time - 80 170 ns td(off) Turn-Off Delay Time - 65 140 ns tf Fall Time - 60 130 ns Qg Total Gate Charge VGS=480V, VGS=10V, ID=7.5 A(Note3,4) - 29 38 nC Qgs Gate-Source Charge - 7 - nC Qgd Gate-Drain “Miller” Charge - 14.5 - nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage2 ID=7.5A - - 1.5 V trr Reverse Recovery Time IS=7.5 A,VGS=0V di/dt=100A/Μs (Note3) - 320 - ns Qrr Reverse Recovery Charge - 2.4 - nC
2016 Mar. V1.0 Page 3 www.hldic.com Typical Characteristics TJ=25℃ unless otherwise noted
2017 Mar. V1.0 Page 4 www.hldic.com
www.hldic.com Page 5 2017 Mar. V1.0