HLDD6P10

HLDD6P10 HUILIDA | Alldatasheet

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□ VDS =-100V,ID =-6A □ RDS(ON)：650mΩ@VGS=10V □ Low gatecharge. □ Green deviceavailable. □ AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON) □ Excellentpackageforgoodheatdissipation. Absolute Maximum Ratings (TC=25℃unless otherwise noted) Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 6 ℃/W P -Channel MOSFET Symbol Parameter Rating Units VDS Drain-Source Voltage --100 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ -10V1 --6. A ID@TC=100℃ Continuous Drain Current, VGS @ -10V1 --4. A ID@TA=25℃ Continuous Drain Current, VGS @ -10V1 --2. A ID@TA=70℃ Continuous Drain Current, VGS @ -10V1 -- A IDM Pulsed Drain Current2 --8. A PD@TC=25℃ Total Power Dissipation3 20.8 W PD@TA=25℃ Total Power Dissipation3 2 W TSTG Storage Temperature Range --55 to 15 ℃ TJ Operating Junction Temperature Range --55 to 15 ℃

Package Marking and Ordering Information Part NO. Marking Package HLDD6P10 D6P10 TO-252 Electrical Characteristics (TC=25℃unless otherwise noted) Notes: 1.Repetitive Rating: Pulse widthlimited bymaximum junction temperature. 2.Surface Mounted on FR4 Board, t ≤ 10 sec. 3.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤2 %. 4. Guaranteed by design, not subject toproduction Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -100 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.0624--- V/℃ VGS=-10V , ID=-1A --- 0.52 0.65 RDS(ON) Static Drain-Source On-Resistance2 Ω VGS(th) Gate Threshold Voltage -1.0 -1.5 -2.5 V △VGS(th) VGS(th) Temperature Coefficient VGS=VDS , ID =-250uA 4.5 --- --- mV/℃ VDS=-80V , VGS=0V , TJ=25℃ --- --- 10 IDSS Drain-Source Leakage Current VDS=-80V , VGS=0V , TJ=55℃ --- --- 100 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forwar Trd ansconductance VDS=-5V , ID=-1A 3 --- --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 16 32 Ω Qg Total Gate Charge (-4.5V) --- 4.5 --- Qgs Gate-Source Charge --- 1.14 --- Qgd Gate-Drain Charge VDS=-15V , VGS=-4.5V , ID=-1A --- 1.5 --- nC Td(on) Turn-On Delay Time --- 13.6 --- Tr Rise Time 6.8 --- --- Td(off) Turn-Off Delay Time 34 --- --- Tf TFall ime VDD=-50V , VGS=-10V , RG=3.3Ω ID=-1A 3 --- --- ns Ciss Input Capacitance --- 553 --- Coss Output Capacitance 29 --- --- Crss Reverse Transfer Capacitance VDS=-15V , VGS=0V , f=1MHz --- --- 20 pF Force Current --- --- -8.2 A Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current1,4 --- --- -6.0 A ISM Pulsed Source Current2,4 VG=VD=0V , VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V Diode Characteristics

P-Ch 100V Fast Switching MOSFETs 0.0 0.3 0.6 0.9 1.2 0 0.25 0.5 0.75 1 -VDS ,Drain-to-Source Voltage (V) -ID Drain Current (A) VGS=-10V VGS=-7V VGS=-5V VGS=-4.5V VGS=-3V 500 510 520 530 540 550 42 86 10 -VGS (V) RDSON (mΩ) ID=0.5 A 0.5 1.5 -VSD , Source-to-Drain Voltage (V) -IS Source Current(A) TJ=150℃ TJ=25℃ 2.5 7.5 0 2.5 5 7.5 10 QG , Total Gate Charge (nC) -VGS Gate to Source Voltage (V) VDS=-20V ID=-1A 0.2 0.6 1.4 1.8 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) Normalized VGS(th) (V) 0.5 1.0 1.5 2.0 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance Fig.1 T ypical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

P-Ch 100V Fast Switching MOSFETs 100 1000 1 5 9 31 17 12 25 -VDS ,Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 0.1 1 10 100 1000 VDS (V) ID (A) 10us 100us 10ms 100ms DC TC=25℃ Single Pulse 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (RθJC) 0.01 0.02 0.05 0.1 0.2 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T DUTY=0.5 Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform

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