HLDF35P06

HLDF35P06 HUILIDA | Alldatasheet

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Features

□ VDS =-60V,ID =-35A □ RDS(ON)<25mΩ@VGS=10V □ Low gatecharge. □ Green deviceavailable. □ AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON). □ Excellentpackageforgoodheatdissipation. Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -35 A Drain Current-Continuous(TC=100℃) ID (100℃) -27 A Pulsed Drain Current IDM -70 A Maximum Power Dissipation PD 52 .1 W Derating factor 0.87 W/℃ Single pulse avalanche energy (Note 5) EAS 162 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 2.4 ℃/W

Package Marking and Ordering Information Part NO. Marking Package HLDF35P06 F35P06 TO-220F Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA -60 - - V Zero Gate Voltage Drain Current IDSS VDS=48V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA -1.0 -1.6 -2.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=18A - 20 25 mΩ VGS=4.5V, ID=12A 26 33 Forward Transconductance gFS VDS=10V,ID=20A - 23 - S Dynamic Characteristics (Note4) Input Capacitance Clss VDS=15V,VGS=0V, F=1.0MHz - 3635 - PF Output Capacitance Coss - 224 - PF Reverse Transfer Capacitance Crss - 141 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) VDD=15V,ID=1A, RG=3.3Ω - 38 - nS Turn-on Rise Time tr - 23.6 - nS Turn-Off Delay Time td(off) - 100 - nS Turn-Off Fall Time tf - 6.8 - nS Total Gate Charge Qg VDS=20V,ID=12A , VGS=4.5V - 25 nC Gate-Source Charge Qgs - 6.7 nC Gate-Drain Charge Qgd - 5.5 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1A - -1 V Diode Forward Current (Note 2) IS - - -35 A Reverse Recovery Time trr TJ = 25°C, IF = 40A di/dt = 100A/μs(Note3) - - - nS Reverse Recovery Charge Qrr - - - nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse widthlimited bymaximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 se c. 3. Pulse Test: PulseW idth ≤ 300μs, Duty Cycle ≤2% . 4. Guaranteed by design, not subject toproduction 5. EAS condition : VDD=-25V,VGS=-10V,L=0.1mH,IAS=-47.6A

VGS=-4.5V VGS=-3V VGS=-10V VGS=-7V VGS=-5V TJ=150℃ TJ=25℃ Typical Characteristics Normalized -VGS(th) Normalized On Resistance RDSON(mΩ) P-Ch 60V Fast Switching MOSFETs 12 30 10 28 2 22 0 20 0 0.25 0.5 0.75 1 2 -VDS Drain-to-Source Voltage (V) 4 6 8 10 -VGS (V) 12 10 0.2 0.4 0.6 0.8 1 -VSD , Source-to-Drain Voltage (V) 0 20 40 60 QG , Total Gate Charge (nC) 1.5 0.5 2.0 1.5 1.0 -50 0 50 100 150 TJ ,Junction Temperature ( ℃) 0.5 -50 0 50 100 150 TJ , Junction Temperature ( ℃) Fig.6 Normalized RDSON v.s TJ Fig.5 Normalized VGS(th) v.s TJ Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics Of Reverse Fig.2 On-Resistance v.s Gate-Source Fig.1 Typical Output Characteristics -IS Source Current(A) -ID Drain Current (A) -VGS Gate to Source Voltage (V) ID=-12A VDS=-20V ID=-12A

F=1.0MHz Ciss Coss 9 13 17 Capacitance (pF) -ID(A) P-Ch 60V Fast Switching MOSFETs 10000 100.00 10.00 1000 1.00 100 0.10 1 5 D -V n to S rce V (V) 21 25 0.01 0.1 1 -V 10(V) 100 1000 DS rai ou oltage DS Fig.7 Capacitance DUTY=0.5 Fig.8 Safe Operating Area 0.3 0.1 0.1 0.05

0.02 PDM TON

0.01 T D = TON/T SINGLE PULSE 0.01 TJpeak = TC + PDM x θJC t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform 100us 1ms 10ms 100ms DC Tc=25oC Single Pulse Normalized Thermal Response (RθJC)