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□ VDS =800V,ID =10A □ RDS(ON)：1.1Ω@VGS=10V □ Low gatecharge. □ Green deviceavailable. □ AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON). □ Excellentpackageforgoodheatdissipation. Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 800 V VGS Gate-Source Voltage ±30 V ID Continuous Drain Current- 10 A Continuous Drain Current-T C=100℃ 6.32 EAS Single Pulse Avalanche Energy1 920 mJ PD Power Dissipation 113 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics Symbol Parameter Ratings Units RƟJC Thermal Resistance,Junction to Case 0.52 ℃/W RƟJA Thermal Resistance,Junction to Ambient 40 *Drain current limited by maximum junction temperature.
2017 . H1.0 Page 2 www.hldic.com Package Marking and Ordering Information Part NO. Marking Package HLDF10N80 HLDF10N80 TO-220F Electrical Characteristics (TC=25℃unless otherwise noted) Notes: 1.Repetitive Rating: Pulse widthlimited bymaximum junction temperature. . Surface Mounted on FR4 Board, t ≤ 10 sec. 3.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤2 %. 4.Guaranteed by design, not subject toproduction Symbo l Parameter Conditions Mi n Ty p Max Unit s Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 800 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=800V --- --- 10 μA IGSS Gate-Source Leakage Current VGS=±30V, VDS=0V --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 3 --- 5 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=5A --- --- 1.1 Ω Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 2150 2800 pF Coss Output Capacitance --- 180 230 Crss Reverse Transfer Capacitance --- 15 20 Switching Characteristics td(on) Turn-On Delay Time VDD=400V, ID=10A RG=25Ω (Note 3,4) --- 50 110 ns tr Rise Time --- 130 270 ns td(off) Turn-Off Delay Time --- 90 190 ns tf Fall Time --- 80 170 ns Qg Total Gate Charge VGS=10V, VDS=560 ID=9A (Note 3,4) --- 45 58 nC Qgs Gate-Source Charge --- 13.5 --- nC Qgd Gate-Drain “Miller” Charge --- 17 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage Ld=10A --- --- 1.4 V trr Reverse Recovery Time IS=10A,VGS=0V DiF/dt=100A/μs --- 730 --- ns Qrr Reverse Recovery Charge --- 10.9 --- nC
2017 . H1.0 Page 3 www.hldic.com Typical Characteristics TJ=25℃ unless otherwise noted
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