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□ VDS =800V,ID =8A □ RDS(ON) ：1.3Ω@VGS=10V □ Low gatecharge. □ Green deviceavailable. □ AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON). □ Excellentpackageforgoodheatdissipation. Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 800 V VGS Gate-Source Voltage ±30 V ID Continuous Drain Current- 8 A Continuous Drain Current-T C=100℃ 4.8 EAS Single Pulse Avalanche Energy1 380 mJ PD Power Dissipation 62 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics Symbol Parameter Ratings Units RƟJC Thermal Resistance,Junction to Case 2.25 ℃/W RƟJA Thermal Resistance,Junction to Ambient 62.5
2017 . H1.0 Page 2 www.hldic.com Package Marking and Ordering Information Part NO. Marking Package HLDF8N80 HLDF8N80 TO-220F Electrical Characteristics (TC=25℃unless otherwise noted) Notes: 1.Repetitive Rating: Pulse widthlimited bymaximum junction temperature. 2.Surface Mounted on FR4 Board, t ≤ 10 sec. 3.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤2 %. 4.Guaranteed by design, not subject toproduction Symbo l Parameter Conditions Mi n Ty p Max Unit s Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 800 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=800V --- --- 10 μA IGSS Gate-Source Leakage Current VGS=±30V, VDS=0V --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 3 --- 5 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=3. 5A --- --- 1.3 Ω Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 1420 1850 pF Coss Output Capacitance --- 150 195 Crss Reverse Transfer Capacitance --- 19 25 Switching Characteristics td(on) Turn-On D elay Time VDD=400V, ID=3A RG=25Ω (Note 3,4) --- 35 80 ns tr Rise Time --- 80 170 ns td(off) Turn-Off Delay Time --- 95 200 ns tf Fall Time --- 55 120 ns Qg Total Gate Charge VGS=10V, VDS=640 ID=6.6A ( Note 3,4) --- 40 52 nC Qgs Gate-Source Charge --- 8.5 --- nC Qgd Gate-Drain “Miller” Charge --- 20 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage Ld=6.6A --- --- 1.4 V trr Reverse Recovery Time IS=6.6A,VGS=0V DiF/dt=100A/μs --- 400 --- ns Qrr Reverse Recovery Charge --- 4.3 --- nC
2017 . H1.0 Page 3 www.hldic.com Typical Characteristics TJ=25℃ unless otherwise noted
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