HLDD8N60 HUILIDA | Alldatasheet
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Technical content
Features
□ VDS =600V,ID =7.5A □ RDS(ON):1Ω@VGS=10V □ Low gatecharge. □ Green deviceavailable. □ AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON). □ Excellentpackageforgoodheatdissipation. Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Drain Current-Continuous ID 7.5 A Drain Current-Continuous(TC=100℃) ID (100℃) 5 A Pulsed Drain Current IDM - A Maximum Power Dissipation PD 48 W Derating factor - W/℃ Single pulse avalanche energy (Note 5) EAS 420 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 2.6 ℃/W
Package Marking and Ordering Information Part NO. Marking Package HLDD8N60 D8N60 TO-252 Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 600 - - V Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V - - 10 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2 - 4 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3.7A - - 1 Ω VGS=4.5V, ID=0A - - Forward Transconductance gFS VDS=10V,ID=0A - - - S Dynamic Characteristics (Note4) Input Capacitance Clss VDS=25V,VGS=0V , F=1.0MHz - 1100 1430 PF Output Capacitance Coss - 135 175 PF Reverse Transfer Capacitance Crss - 16 21 PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) VDD=15V,ID=2A,RL=15Ω VGS=10V,RG=2.5Ω - 30 70 nS Turn-on Rise Time tr - 80 170 nS Turn-Off Delay Time td(off) - 65 140 nS Turn-Off Fall Time tf - 60 130 nS Total Gate Charge Qg VDS=480V,ID=7.5 A, VGS=10V - 29 nC Gate-Source Charge Qgs - 7 nC Gate-Drain Charge Qgd - 14.5 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=10A - 1.5 V Diode Forward Current (Note 2) IS - - 150 A Reverse Recovery Time trr TJ = 25°C, IF = 40A di/dt = 100A/μs(Note3) - 320 - nS Reverse Recovery Charge Qrr - 2.4 - nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse widthlimited bymaximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 se c. 3. Pulse Test: PulseW idth ≤ 300μs, Duty Cycle ≤2% . 4. Guaranteed by design, not subject toproduction 5. EAS condition : Tj=25℃,VDD=50V,VG=10V,L=1mH,Rg=25Ω，IAS=7.5A
Typical Characteristics TJ=25℃ unless otherwise noted