HLDD6N10 HUILIDA | Alldatasheet

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□ VDS =100V,ID =6A □ RDS(ON)：310 mΩ@VGS=10V □ Low gatecharge. □ Green deviceavailable. □ AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON). □ Excellentpackageforgoodheatdissipation. Absolute Maximum Ratings (TC=25℃unless otherwise noted) Thermal Characteristic Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VG S @ 10V1 5.4 A ID@TC=100℃ Continuous Drain Current, VG S @ 10V1 3.4 A ID@TA=25℃ Continuous Drain Current, VG S @ 10V1 1.7 A ID@TA=70℃ Continuous Drain Current, VG S @ 10V1 1.3 A IDM Pulsed Drain Current2 11 A PD@TC=25℃ Total Power Dissipation3 20.8 W PD@TA=25℃ Total Power Dissipation3 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-ambient 1 ---62 ℃ / WRθJC Thermal Resistance Junction-Case1 ---6 ℃/ W

Package Marking and Ordering Information Part NO. Marking Package HLDD6N10 D6N10 TO-252 Electrical Characteristics (TC=25℃unless otherwise noted) Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. . The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3. The power dissipation is limited by 150℃ junction temperature . The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.0672 --- V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=5A --- 260 310 VGS=4.5V , ID=3A --- 270 320 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 1.5 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -4.12 --- mV/℃ IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 10 uA VDS=80V , VGS=0V , TJ=55℃ --- --- 100 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=3A --- 5.4 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.5 5 ∧ Qg Total Gate Charge (10V) VDS=80V , VGS=10V , ID=5A --- 9.6 13.4 nC Qgs Gate-Source Charge --- 1.83 2.56 Qgd Gate-Drain Charge --- 1.85 2.6 Td(on) Turn-On Delay Time VDD=50V , VGS=10V , RG=3.3∧ ID=5A --- 1.4 2.8 ns Tr Rise Time --- 30.6 55 Td(off) Turn-Off Delay Time --- 11.2 22 Tf Fall Time --- 6 12 Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 508 711 pF Coss Output Capacitance --- 29 41 Crss Reverse Transfer Capacitance --- 16.4 23 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current1,4 VG=VD=0V , Force Current --- --- 5.4 A ISM Pulsed Source Current2,4 --- --- 11 A VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time IF=5A , dI/dt=100A/µs , TJ=25℃ --- 20 --- nS Qrr Reverse Recovery Charge --- 19 --- nC Diode Characteristics

Normalized VGS(th) (V) ID Drain Current (A) Normalized On Resistance 8.0 6.0 4.0 2.0 0.0 0 1 2 3 4 5 VDS ,Drain-to-Source Voltage (V) 1.5 0.5 VSD , Source-to-Drain Voltage (V) 1.8 1.4 0.6 2.5 2.0 1.5 1.0 0.2 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) 0.5 -50 100 150 0 50 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ Fig.5 Normalized VGS(th) vs. TJ N-Ch 100V Fast Switching MOSFETs Fig.1 Typical Output Characteristics Fig.3 Forward Characteristics Of Reverse VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=3V Fig.2 On-Resistance vs. Gate-Source Fig.4 Gate-Charge Characteristics TJ=25℃ TJ=150℃ IS Source Current(A)

Fig.10 Switching Time Waveform 1000 100 1 5 9 13 17 21 25 VDS Drain to Source Voltage (V) 0.1 0.01 t , Pulse Width (s) Fig.7 Capacitance Fig.9 Normalized Maximum Transient Thermal Impedance Fig.11 Gate Charge Waveform Fig.8 Safe Operating Area DUTY=0.5 0.02 0.2 0.1

0.05 PDM T ON

T 0.01 SINGLE D = TON/T TJpeak = TC+PDMXRθJC Capacitance (pF) Normalized Thermal Response (RθJC) F=1.0MHz Ciss Coss Crss N-Ch 100V Fast Switching MOSFETs