HLDD60P03 HUILIDA | Alldatasheet

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Technical content

Features

□ VDS =-30V,ID =-75A □ RDS(ON)：9mΩ@VGS=10V □ Low gatecharge. □ Green deviceavailable. □ AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON) □ Excellentpackageforgoodheatdissipation. Marking and pin assignment P-Channel MOSFET

P ackage Marking and Ordering Information Part NO. Marking Package HLDD60P03 D60P03 TO-252 Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA -30 - - V Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V - - -1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA -1.2 -1.6 - 2.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=-30A - 7.1 9 mΩ VGS=4.5V, ID=-24A 11.5 15 Forward Transconductance gFS VDS=-10V,ID=-10A - 14 - S Dynamic Characteristics (Note4) Input Capacitance Clss VDS=-15V,VGS=0 V, F=1.0MHz - 3300 4800 PF Output Capacitance Coss - 410 700 PF Reverse Transfer Capacitance Crss - 280 500 PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) VDD=-15V,ID=-1A, VGS=-10V,RG=6Ω - 24.5 38 nS Turn-on Rise Time tr - 10.5 16 nS Turn-Off Delay Time td(off) - 156 230 nS Turn-Off Fall Time tf - 50 75 nS Total Gate Charge Qg VDS=-15V,ID=-10 A, VGS=-4.5V - 35 nC Gate-Source Charge Qgs - 10.8 nC Gate-Drain Charge Qgd - 10.6 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=10A - -1 V Diode Forward Current (Note 2) IS - - -75 A Reverse Recovery Time trr TJ = 25°C, IF = 40A di/dt = 100A/μs(Note3) - - - nS Reverse Recovery Charge Qrr - - - nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating:Pulse widthlimited bymaximumjunctiontemperature. 2. Surface Mounted on FR4 Board, t ≤ 10s ec. 3. Pulse Test: PulseW idth ≤ 300μs, Duty Cycle ≤2 % . 4. Guaranteed by design, not subject toproduction

TC , Case Temperature (℃) Fig.1 Continuous Drain Current vs. T C TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. T J TJ , Junction Temperature (℃) Fig.3 Normalized V th vs. TJ Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform -VDS , Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance Normalized Gate Threshold Voltage (V ) Normalized Thermal Response (RθJC) ID , Continuous Drain Current (A ) -ID , Continuous Drain Current (A ) -VGS , Gate to Source Voltage (V ) N or m al iz ed O n R es ist an ce m Ω

-VDS 90% 10% -VGS Td(on) Tr Td(off) Tf Ton Toff Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform