HLDD60N06 HUILIDA | Alldatasheet
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Features
□ VDS =60V,ID =60A □ RDS(ON)<18mΩ@VGS=10V □ Low gatecharge. □ Green deviceavailable. □ AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON) . □ Excellentpackageforgoodheatdissipation. Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 60 A Drain Current-Continuous(TC=100℃) ID (100℃) 35.4 A Pulsed Drain Current IDM 200 A Maximum Power Dissipation PD 85 W Derating factor 0.57 W/℃ Single pulse avalanche energy (Note 5) EAS 300 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 1.8 ℃/W
Package Marking and Ordering Information Part NO. Marking Package HLDD60N06 D60N06 TO-252 Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 60 - - V Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.4 1.9 2.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=20A - 14 20 mΩ Forward Transconductance gFS VDS=5V,ID=20A 18 - - S Dynamic Characteristics (Note4) Input Capacitance Clss VDS=30V,VGS=0V, F=1.0MHz - 2050 - PF Output Capacitance Coss - 158 - PF Reverse Transfer Capacitance Crss - 120 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) VDD=30V, RL=6.7Ω VGS=10V,RG=3Ω - 7.4 - nS Turn-on Rise Time tr - 5.1 - nS Turn-Off Delay Time td(off) - 28.2 - nS Turn-Off Fall Time tf - 5.5 - nS Total Gate Charge Qg VDS=30V,ID=20A, VGS=10V - 50 nC Gate-Source Charge Qgs - 6 nC Gate-Drain Charge Qgd - 15 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=20A - 1.2 V Diode Forward Current (Note 2) IS - - 60 A Reverse Recovery Time trr TJ = 25°C, IF =20A di/dt = 100A/μs(Note3) - 28 - nS Reverse Recovery Charge Qrr - 40 - nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 se c. 3. Pulse Test: Pulse W idth ≤ 300μs, Duty Cycle ≤ 2 % . 4. Guaranteed by design, not subject toproduction 5. EAS condition : Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25
1) EASTestCircuit 2) Gate Charge TestCircuit 3) Switch Time TestCircuit