HLDD50P04 HUILIDA | Alldatasheet

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Features

□ VDS =-40V,ID =-45A □ RDS(ON)：1 5mΩ@VGS=10V □ Low gatecharge. □ Green deviceavailable. □ AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON). □ Excellentpackageforgoodheatdissipation. Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -45 A Drain Current-Continuous(TC=100℃) ID (100℃) -28 A Pulsed Drain Current IDM -180 A Maximum Power Dissipation PD 73.5 W Derating factor 0.59 W/℃ Single pulse avalanche energy (Note 5) EAS 130 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 1.7 ℃/W

Package Marking and Ordering Information Part NO. Marking Package HLDD50P04 D50P04 TO-252 Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA -40 - - V Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V - - -1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA -1.0 -1.6 -2.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=10A - 11.5 15 mΩ VGS=4.5V, ID=8A 16 22 Forward Transconductance gFS VDS=10V,ID=20A - 13 - S Dynamic Characteristics (Note4) Input Capacitance Clss VDS=-25V, VGS=0V, F=1.0MHz - 2757 4000 PF Output Capacitance Coss - 240 360 PF Reverse Transfer Capacitance Crss - 137 200 PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) VDD=20V,ID=-1A, VGS=-10V,RG=6Ω - 23 40 nS Turn-on Rise Time tr - 10 20 nS Turn-Off Delay Time td(off) - 135 250 nS Turn-Off Fall Time tf - 46 90 nS Total Gate Charge Qg VDS=-32V,ID=10A, VGS=-4.5V - 22.2 40 nC Gate-Source Charge Qgs - 8.2 nC Gate-Drain Charge Qgd - 8.8 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-1A - -1 V Diode Forward Current (Note 2) IS - - -45 A Reverse Recovery Time trr - - - nS Reverse Recovery Charge Qrr - - - nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse widthlimited bymaximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 se c. 3. Pulse Test: PulseW idth ≤ 300μs, Duty Cycle ≤2% . 4. Guaranteed by design, not subject toproduction 5. EAS condition : VDD=25V,VGS=10V,L=0.1mH,IAS=51A.,RG=25 ,Starting TJ=25℃.

Fig.1 Continuous Drain Current vs. TC Fig.2 Normalized RDSON vs. TJ TC , Case Temperature (℃) TJ , Junction Temperature (℃) TJ , Junction Temperature (℃) Qg , Gate Charge (nC) Square Wave Pulse Duration (s) -VDS , Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area Fig.4 Gate Charge Waveform Fig.3 Normalized Vth vs. TJ Fig.5 Normalized Transient Impedance Normalized Gate Threshold Voltage (V ) Normalized Thermal Response (RθJA) ID , Continuous Drain Current (A ) N or m al iz e d O n R es is ta n ce m Ω -ID , Continuous Drain Current (A ) -VGS , Gate to Source Voltage (V )

-VDS 90% 10% -VGS Td(on) Tr T d(off) f T Ton Toff Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform