HLDD4N65 HUILIDA | Alldatasheet
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□ VDS =650V,ID =4A □ RDS(ON)：2.3Ω@VGS=10V □ Low gatecharge. □ Green deviceavailable. □ AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON). □ Excellentpackageforgoodheatdissipation. Absolute Maximum Ratings (TC=25℃unless otherwise noted) Thermal Characteristic Symbol Parameter Ratings Units VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Continuous Drain Current- 4 A Continuous Drain Current-T C=100℃ 1.8 EAS Single Pulse Avalanche Energy2 240 mJ PD Power Dissipation 44 W TJ, TSTG Operating and Storage Junction Temperature Range -55~+150 ℃ Symbol Parameter Ratings Units RƟJC Thermal Resistance,Junction to Case 2.56 ℃/W RƟJA Thermal Resistance,Junction to Ambient4 110
www.hldic.com Page 2 2017 Mar. V1.0 Package Marking and Ordering Information Part NO. Marking Package HLDD4N65 HLDD4N65 TO-252 Electrical Characteristics (TC=25℃unless otherwise noted) Notes: 1.Repetitive Rating: Pulse widthlimited bymaximum junction temperature. 2.Surface Mounted on FR4 Board, t ≤ 10 sec. 3.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤2 %. 4.Guaranteed by design, not subject toproduction Symbo l Parameter Conditions Mi n Ty p Max Unit s Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 650 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=650V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±30V, VDS=0V --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 --- 4 V RDS(ON) Drain-Source On Resistance3 VGS=10V,ID=2A --- --- 2.3 Ω Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 515 670 pF Coss Output Capacitance --- 55 72 Crss Reverse Transfer Capacitance --- 6.5 8.5 Switching Characteristics td(on) Turn-On Delay Time3 VDS=300V, ID=4A, RG=25Ω --- 150 30 ns tr Rise Time2,3 --- 42 90 ns td(off) Turn-Off Delay Time --- 38 85 ns tf Fall Time2,3 --- 46 100 ns Qg Total Gate Charge3 VGS=10V, VDS=480 ID=4A --- 15 19 pF Qgs Gate-Source Charge --- 2 --- nC Qgd Gate-Drain “Miller” Charge --- 6.6 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage3 VGS=0V,IS=4A --- --- 1.25 V trr Reverse Recovery Time3 IS=4A,di/dt=100A/μS --- 300 --- ns Qrr Reverse Recovery Charge --- 2.2 --- nC
www.hldic.com Page 3 2017 Mar. V1.0 Typical Characteristics TJ=25℃ unless otherwise noted
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www.hldic.com Page 5 2017 Mar. V1.0