HLDD30N10 HUILIDA | Alldatasheet
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□ VDS =100V,ID =30A □ RDS(ON) ：31mΩ@VGS=10V □ Low gatecharge. □ Green deviceavailable. □ AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON). □ Excellentpackageforgoodheatdissipation. Absolute Maximum Ratings (TC=25℃unless otherwise noted) Thermal Characteristic Symbol Parameter Ratings Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current- 30 A Continuous Drain Current-TC=100℃ 21 Pulsed Drain Current 70 A EAS Single Pules Avalanche Energy5 256 mJ PD Power Dissipation 85 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ℃ Symbol Parameter Ratings Units RƟJC Thermal Resistance,Junction to Case2 1.8 ℃/W RƟJA Thermal Resistance,Junction to Ambient ---
Package Marking and Ordering Information Part NO. Marking Package HLDD30N10 D30N10 TO-252 Electrical Characteristics (TC=25℃unless otherwise noted) Notes: 1.Repetitive Rating: Pulse widthlimited bymaximum junction temperature. . Surface Mounted on FR4 Board, t ≤ 10 sec. 3.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤2 %. 4.Guaranteed by design, not subject toproduction . EAS Condition : Tj=25℃ ,V DD=50V,VG=10V,L=0.5mH,Rg=25 , IAS=32A Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V, ID=250μA 100 115 --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=100V --- --- 1 μA Tc=125℃ VDS=480V --- --- --- μA IGSS Gate-Source Leakage Current VGS= ±20V, VDS=0V --- --- ±100 nA On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.3 1.9 2.5 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=10A --- 27 31 mΩ Dynamic Characteristics4 Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 2000 --- pF Coss Output Capacitance --- 300 --- Crss Reverse Transfer Capacitance --- 250 --- Switching Characteristics4 td(on) Turn-On Delay Time VDS=50V,RL=5Ω RGEN=3Ω , VGS=10V --- 7 --- ns tr Rise Time --- 7 --- ns td(off) Turn-Off Delay Time --- 29 --- ns tf Fall Time --- 7 --- ns Qg Total Gate Charge VGS=10V, VDS=50V, ID=10A --- 39 --- nC Qgs Gate-Source Charge --- 8 --- nC Qgd Gate-Drain “Miller” Charge --- 12 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage3 trr Reverse Recovery Time IS=10A,VGS =0V diF/dt=100A/μs (Note3) --- 32 --- ns Qrr Reverse Recovery Charge --- 53 --- nC
Typical Characteristics TJ=25℃ unless otherwise noted