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□ VDS =600V,ID =2A □ RDS(ON)： 5Ω@VGS=10V □ Low gatecharge. □ Green deviceavailable. □ AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON). □ Excellentpackageforgoodheatdissipation. Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Drain Current-Continuous ID 2 A Drain Current-Continuous(TC=100℃) ID (100℃) 1.3 A Pulsed Drain Current IDM 6 A Maximum Power Dissipation PD 130 W Derating factor 0.43 W/℃ Single pulse avalanche energy (Note 5) EAS 120 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 0.43 ℃/W

2017 . H1.0 Page 2 www.hldic.com Package Marking and Ordering Information Part NO. Marking Package HLDD2N60 HLDD2N60 TO-252 Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 600 - - V Zero Gate Voltage Drain Current IDSS VDS=600V,VGS=0V - - 10 μA Gate-Body Leakage Current IGSS VGS=±30V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2 - 4 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1A - 3.8 5 Ω VGS=4.5V, ID=0A - - Forward Transconductance gFS VDS=40V,ID=1A - 2.5 - S Dynamic Characteristics (Note4) Input Capacitance Clss VDS=25V,VGS=0V , F=1.0MHz - 380 490 PF Output Capacitance Coss - 35 46 PF Reverse Transfer Capacitance Crss - 7.6 9.9 PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) VDD=300V,ID=2A, RG=2.5Ω - 16 40 nS Turn-on Rise Time tr - 50 110 nS Turn-Off Delay Time td(off) - 40 90 nS Turn-Off Fall Time tf - 40 90 nS Total Gate Charge Qg VDS=480V,ID=2A , VGS=10V - 15.3 nC Gate-Source Charge Qgs - 1.8 nC Gate-Drain Charge Qgd - 7.2 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=2A - - V Diode Forward Current (Note 2) IS - - 2 A Reverse Recovery Time trr VGS=0V,IS=2A dIf/dt=100A/us - 250 - nS Reverse Recovery Charge Qrr - 1.31 - nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1：Pulse width limited by maximum junctiontemperature 2：L=55mH, IBASB=2.0A, VBDDB=50V, RBGB=25 Ω,StartingTBJB=25℃ 3：IBSDB ≤2A,di/dt ≤300A/μs,VDD≤BVBDSSB, Starting TBJB=25℃ 4：Pulse Test：Pulse Width ≤300μs,Duty Cycle≤2％ 5：Essentially independent of operating temperature

2017 . H1.0 Page 3 www.hldic.com ELECTRICAL CHARACTERISTICS (curves) 1 10 0.1 VGS Top 15V 10V 6.5V 5.5V Bottom 5V Notes：1. 250μs pulse test 2. TC=25℃ ]ID [A VDS[V] 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 Note ：Tj=25 ℃ VGS=10V VGS=20V RDS(on) [ Ω ] ID[A] ELECTRICAL CHARACTERISTICS (curves) Transfer Characteristics On-Resistance Variation vs. Drain Current and Gate Voltage Body Diode Forward Voltage Variation vs. Source Current and Temperature Capacitance Characteristics Gate Charge Characteristics On-Region Characteristics 0 2 4 6 8 10 12 14 16 18 VDS=480V VDS=300V VDS=120V Qg Toltal Gate Charge [nC] ]VGS Gate Sou rce Voltage[V 2 4 6 8 10 0.1 Notes： 1.250μs pulse test 2.VDS=40V 150℃ ID [A] VGS [V] 25℃ 0.1 Notes： 1. 250μs pulse test 2. VGS=0V 25℃ 150℃ V S D [V] I DR [A]

2017 . H1.0 Page 4 www.hldic.com -75 -50 -25 0 25 50 75 100 125 150 0.8 0.9 1.0 1.1 1.2 Notes： 1.VGS=0V 2.ID=250μA BV DSS (Normalized) Tj [℃] -75 -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 N o es： 1. V GS=10V 2. ID A=1.0 RDS(on) (Normalized) Tj [ ℃] 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0]ID Drain Current [A TC Case Temperature [℃] Breakdown Voltage Variation vs. Temperature On-Resistance Variation vs. Temperature Maximum Safe Operating Area For JCS2N60V/R/C Maximum Drain Current vs. Case Temperature Maximum Safe Operating Area For JCS2N60F

2017 . H1.0 Page 5 www.hldic.com ELECTRICAL CHARACTERISTICS (curves) Transient Thermal Response Curve For JCS2N60C Transient Thermal Response Curve For JCS2N60F Transient Thermal Response Curve For JCS2N60V/R

2017 . H1.0 Page 6 www.hldic.com