HLDD120N03 HUILIDA | Alldatasheet
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Features
□ VDS =30V,ID =120A □ RDS(ON)： 4.5mΩ@VGS=10V □ Low gatecharge. □ Green deviceavailable. □ AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON). □ Excellentpackageforgoodheatdissipation. Absolute Maximum Ratings (TC=25℃unless otherwise noted) Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 1.25 ℃/W Parameter a ymbol Limit Unit Drain-Source Voltage VDS 0 30 Gate-Source Voltage VGS ±20 2 Drain Current-Continuous ID 2 120 Drain Current-Continuous(TC=100℃) D (100℃) 8 A Pulsed Drain Current IDM 0 400 Maximum Power Dissipation PD 2 120 Single pulse avalanche energy (Note 5) ASE 350 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃
2017 . H1.0 Page 2 www.hldic.com Package Marking and Ordering Information Part NO. Marking Package HLDD120N03 D120N03 TO-252 Electrical Characteristics (TC=25℃unless otherwise noted) Notes: Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Volt age BVDSS GS=0VV ID=250μA 3 0 - - V Zero Gate Voltage Drain Current IDSS DS=V30V,VGS=0V0 - 1 μA Gate-Body Leakage Current IGSS 0GS=±V20V,VDS=0V - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) DS=VVGS,ID=250μA 1 1.6 3 V Drain-Source On-State Resistance RDS(ON) AGS=V10V, ID=20A 3.5 4.5 mΩ Forward Transconductance gFS 0ADS=V10V,ID=20A - - S Dynamic Characteristics (Note4) Input Capacitance Clss PF 4120 Output Capacitance Coss 498 PF Reverse Transfer Capacitance Crss VDS=25V,VGS=0V, F=1.0MHz 456 PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - - nS 11 Turn-on Rise Time tr --10 nS Turn-Off Delay Time td(off) --38 nS Turn-Off Fall Time tf VGS=10V,VDS =20V RL=0.75Ω,R GEN=3Ω 11-- - nS Total Gate Charge Qg nC 79 Gate-Source Charge Qgs 9 nC Gate-Drain Charge Qgd VGS=10V,VDS =15V,ID=20A 18 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) SDV GS=0VV,IS=20A0 - 1.2 V Diode Forward Current (Note 2) SI - - 120 A Reverse Recovery Time trr -- nS 58 Reverse Recovery Charge Qrr TJ = 25°C, I F =60A di/dt = 100A/μs(Not e3) -- 115 - nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition：Tj=25℃,VDD=15V,VG=10V,L=0.5mH,Rg=25Ω
2017 . H1.0 Page 3 www.hldic.com Test circuit 1）EAS test Circuits 2）Gate charge test Circuit: 3）Switch Time Test Circuit：
2017 . H1.0 Page 6 www.hldic.com