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□ VDS =30V,ID =100A □ RDS(ON)：5.5 mΩ@VGS=10V □ Low gatecharge. □ Green deviceavailable. □ AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON). □ Excellentpackageforgoodheatdissipation. Absolute Maximum Ratings (TC=25℃unless otherwise noted) Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 1.36 ℃/W Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 100 A Drain Current-Continuous(TC=100℃) ID (100℃) 70 A Pulsed Drain Current IDM 400 A Maximum Power Dissipation PD 110 W Single pulse avalanche energy (Note 5) ASE 350 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃
2017 . H1.0 Page 2 www.hldic.com Package Marking and Ordering Information Part NO. Marking Package HLDD100N03 HLDD100N03 TO-252 Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS GS=0V V ID=250μA 30 - - V Zero Gate Voltage Drain Current IDSS DS=V 30V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS GS=±V 20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) DS=VV GS,ID=250μA 1 1.6 3 V Drain-Source On-State Resistance RDS(ON) GS=V 10V, ID=20A - 4.0 5.5 m Ȋ Forward Transconductance gFS DS=V 10V,ID=20A 50 - - S Dynamic Characteristics (Note4) Input Capacitance Clss 3400 PF Output Capacitance Coss 356 PF Reverse Transfer Capacitance Crss VDS=25V,VGS=0V, F=1.0MHz 308 PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - - nS 11 Turn-on Rise Time tr - - 160 nS Turn-Off Delay Time td(off) - - nS 25 Turn-Off Fall Time tf VDD= 15V,ID=60A VGS=4.5V,R GEN=1.8Ȋ - 60 - nS Total Gate Charge Qg 70 nC Gate-Source Charge Qgs 8.8 nC Gate-Drain Charge Qgd VDS=15V,ID=30A, VGS=10V 16.3 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) SDV GS=0V V,IS=20A - - 1.2 V Diode Forward Current (Note 2) SI - - - 100 A Reverse Recovery Time trr - - 56 nS Reverse Recovery Charge Qrr TJ = 25°C, IF = 60A di/dt = 100A/μs(Note3) - 110 - nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition：Tj=25℃,VDD=15V,VG=10V,L=0.5mH,Rg=25Ȋ
2017 . H1.0 Page 3 www.hldic.com Test circuit 1）EAS test Circuits 2）Gate charge test Circuit: 3）Switch Time Test Circuit：
2017 . H1.0 Page 6 www.hldic.com