HLD4803 HUILIDA | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
Features
□ VDS = -30V,ID = -5.1A RDS(ON) < 85mΩ @ VGS=-4.5V RDS(ON) < 53mΩ @ VGS=-10V □ Low gatecharge. □ Green deviceavailable. □ AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON). □ Excellentpackageforgoodheatdissipation. Absolute Maximum Ratings (TC=25℃unless otherwise noted) D1 D2 S1 S2 Parameter Symbol Limit Unit Drain-Source Voltage VDS - -3 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID - -5. A Drain Current-Pulsed (Note 1) IDM - -2 A Maximum Power Dissipation PD 2.5 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 50 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS GS=0V V ID=-250μA - -3 V Zero Gate Voltage Drain Current IDSS DS=-V 24V,VGS=0V - -1 μA
2017 . H1.0 Page 2 www.hldic.com Package Marking and Ordering Information Part NO. Marking Package HLD4803 HLD4803 SOP-8 Electrical Characteristics (TC=25℃unless otherwise noted) Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature. 2.Surface Mounted on FR4 Board, t ≤ 10 sec. 3.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4.Guaranteed b y design, not subject to production Gate-Body Leakage Current IGSS GS=±V 20V,VDS=0V ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) DS=VV GS,ID=-250μA - - - -3 V VGS=-10V, ID=-5.1A 53 m Ω Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-4.2A 85 m Ω Forward Transconductance gFS DS=-V 15V,ID=-4.5A 4 7 S Dynamic Characteristics (Note4) Input Capacitance Clss PF 1040 Output Capacitance Coss PF 420 Reverse Transfer Capacitance Crss VDS=-15V,VGS=0V, F=1.0MHz 150 PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) 15 nS Turn-on Rise Time tr 13 nS Turn-Off Delay Time td(off) nS 58 Turn-Off Fall Time tf VDD =-15V, ID=-1A, VGS=- 10V,RGEN=6Ω 21 nS Total Gate Charge Qg nC 12 Gate-Source Charge Qgs nC 2.2 Gate-Drain Charge Qgd VDS=-15V,ID= -5.1A,VGS=-10V 3 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD GS=0V V,IS=-1.7A - -1.2 V
2017 . H1.0 Page 6 www.hldic.com