HLD4025 HUILIDA | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
□ Fast switching □ Green Device Available □ Suit for 4.5V Gate Drive Applications Absolute Maximum Ratings (TC=25℃unless otherwise noted) Thermal Characteristic BVDSS RDSON ID 40V 32mΩ 15A -40V 40mΩ -12A N-channel P-channel TO252-4L top view and bottom view Symbol Parameter Rating Units VDS Drain-Source Voltage 40 -40 V VGS Gate-Source Voltage ±20 ±20 V ID Drain Current – Continuous (TC=25℃ ) 15 -12 A Drain Current – Continuous (TC=100℃) 9 -7 A IDM Drain Current – Pulsed 60 -48 A PD Power Dissipation (TC=25℃) 20 W Power Dissipation – Derate above 25℃ 0.16 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJC Thermal Resistance Junction to Case --- 6 ℃/W RθJA Thermal Resistance Junction to Ambient --- 62 ℃/W
2016 Mar. V1.0 Page 2 www.hldic.com Package Marking and Ordering Information Part NO. Marking Package HLD4025 HLD4025 TO-252-4L Electrical Characteristics (TC=25℃unless otherwise noted) Notes: Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 40 --- --- V ᇞBVDSS/ᇞTJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.04 --- V/℃ IDSS Drain-Source Leakage Current VDS=40V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=32V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=6A --- 26 32 mΩ VGS=4.5V , ID=4A --- 36 42 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.6 2.5 V ᇞVGS(th) VGS(th) Temperature Coefficient --- -3 --- mV/℃ gfs Forward Transconductance VDS=10V , ID=3A --- 6.5 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=20V , VGS=4.5V , ID=6A --- 5.2 10 nC Qgs Gate-Source Charge2 , 3 --- 1.2 2.4 Qgd Gate-Drain Charge2 , 3 --- 2.5 5 Td(on) Turn-On Delay Time2 , 3 VDD=20V , VGS=4.5V , RG=25Ω ID=1A --- 3.2 6 ns Tr Rise Time2 , 3 --- 8.6 16 Td(off) Turn-Off Delay Time2 , 3 --- 18 36 Tf Fall Time2 , 3 --- 6 12 Ciss Input Capacitance VDS=15V , VGS=0V , F=1MHz --- 420 800 pF Coss Output Capacitance --- 65 120 Crss Reverse Transfer Capacitance --- 40 80 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 15 A ISM Pulsed Source Current --- --- 30 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Drain-Source Diode Characteristics and Maximum Ratings 1. Repetitive Rating : Pulsed width limit ed by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature.
2016 Mar. V1.0 Page 3 www.hldic.com Fig.9 Normalized V th vs. TJ Normalized Gate Threshold Voltage (V) -VGS , Gate to Source Voltage (V) Fig.10 Gate Charge Waveform Normalized Thermal Response (RθJA) Fig.11 Normalized Transient Impedance -ID , Continuous Drain Current (A) Fig.12 Maximum Safe Operation Area -ID , Continuous Drain Current (A) Fig.7 Continuous Drain Current vs. TC No rm ali ze d On Re sist an ce Fig.8 Normalized RDSON vs. TJ Square Wave Pulse Duration (s) Qg , Gate Charge (nC) TJ , Junction Temperature ( ℃) TJ , Junction Temperature ( ℃) TC , Case Temperature (℃) -VDS , Drain to Source Voltage (V) 40V N+P Dual Channel MOSFETs
www.hldic.com Page 4 2016 Mar. V1.0