FSX017X EUDYNA | Alldatasheet

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Technical content

Edition 1.2 July 1999 FSX017X GaAs FET & HEMT Chips Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Noise Figure Associated Gain Symbol IDSS 35 55 75 -5 0- -0.7 -1.2 -1.7 - 2.5 - - 10.5 - - 21.5 - - 20.5 - - 15.0 - - 7.5 - -5.0 -- VDS = 3V, IDS = 2.7mA VDS = 3V, IDS = 10mA f = 8GHz f = 4GHz f = 8GHz f = 12GHz f = 4GHz f = 8GHz f = 12GHz VDS = 8V, IDS = 0.7 IDSS VDS = 8V, IDS = 0.7 IDSS Channel to Case G.C.P.: Gain Compression Point VDS = 3V, IDS = 27mA VDS = 3V, VGS = 0V IGS = -2.7µA mA mS V dB dBm 20.5 21.5 - dBm dBm dB 10.0 11.0 - dB dB - 120 150 °C/W dB V gm Vp VGSO NF Gas Output Power at 1 dB G.C.P. P1dB Power Gain at 1 dB G.C.P. G1dB Thermal Resistance Rth Test Conditions Unit Limit Typ. Max.Min. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3) The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability. Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS 1.0 -65 to +175 175 Tc = 25°C V V W Ptot Tstg Tch Condition Unit Rating ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain - source operating voltage (VDS) should not exceed 8 volts. 2. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with gate resistance of 2000Ω. 3. The operating channel temperature (Tch) should not exceed 145°C.

FEATURES

  • Medium Power Output: P1dB=21.5dBm(Typ.)@8.0GHz
  • High Power Gain: G1dB=11dB(Typ.)@8.0GHz
  • Proven Reliability

DESCRIPTION

The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic range and are suitable for use in medium power, wide band, linear drive amplifiers or oscillators. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. SourceSource Drain Gate

GaAs FET & HEMT Chips POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAG 1.0 0.8 0.6 0.4 0.2 0 50 100 150 200 Case Temperature (°C) Total Power Dissipation (W) 24 68 1 0 Drain-Source Voltage (V) Drain Current (mA) VGS = 0V -0.2V -0.4V -0.6V -0.8V -1.0V -1.2V OUTPUT POWER vs. INPUT POWER VDS = 8V IDS = 0.7I DSS -4 -2 0 2 4 6 8 10 12 Input Power (dBm) Output Power (dBm) ηadd Pout f=4GHz f=4GHz 8GHz 8GHz 12GHz 12GHz ηadd (%) P1dB vs. VDS f = 8GHz IDS = 0.7 IDSS 45678 Drain-Source Voltage (V) P1dB (dBm)

VDS = 8V, IDS = 35mA FREQUENCY S11 S21 S12 S22 (MHZ) MAG ANG MAG ANG MAG ANG MAG ANG NOTE:* The data includes bonding wires. n: number of wires Gate n=1 (0.1mm length, 25µm Dia Au wire) Drain n=1 (0.1mm length, 25µm Dia Au wire) Source n=4 (0.2mm length, 25µm Dia Au wire) FSX017X GaAs FET & HEMT Chips

For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: CAUTION

  • Do not put these products into the mouth.
  • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
  • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. CHIP OUTLINE SourceSource Drain (Unit: µm) Die Thickness: 100±20µm 450±20 200 Gate 100 100 100100 100 100 420±20 FSX017X GaAs FET & HEMT Chips