FSX017LG EUDYNA | Alldatasheet

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Technical content

Edition 1.2 July 1999 FSX017LG General Purpose GaAs FET Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS 220 -65 to +175 175 Note V V mW Ptot Tstg Tch Condition Unit Rating ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Note: Mounted on Al2O3 board (30 x 30 x 0.65mm) For reliable operation of this FET: 1. The drain - source operating voltage (VDS) should not exceed 4 volts. 2. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with gate resistance of 2000Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Symbol IDSS 35 55 75 -5 0- -0.7 -1.2 -1.7 -5 -- 7.0 8.0 - 15.0 16.0 - VDS = 3V, IDS = 2.7mA VDS = 3V, IDS = 27mA VDS = 3V, VGS = 0V IGS = -2.7µA VDS = 4V IDS = 30mA f = 12GHz mA mS V dB dBm V gm Vp VGSO P1dB G1dB Test Conditions Unit Limit Typ. Max.Min. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) G.C.P.: Gain Compression PointCASE STYLE: LG Note: The RF parameters are measured on a lot basis by sample testing at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested. Channel to CaseThermal Resistance - 300 400 °C/WRth

DESCRIPTION

The FSX017LG is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic range and are suitable for use in medium power, wide band, linear drive amplifiers. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

FEATURES

  • Medium Power Output: P1dB = 16.0dBm (Typ.)@12.0GHz
  • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz
  • Proven Reliability
  • Cost Effective Hermetic Microstrip Package
  • Tape and Reel Available

POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 200 100 150 250 0 50 100 150 200 123456 Ambient Temperature (°C) Drain-Source Voltage (V) Total Power Dissipation (mW) Drain Current (mA) VGS = 0V -0.2V -0.4V -0.6V -0.8V -1.0V -1.2V OUTPUT POWER vs. INPUT POWER VDS=4V IDS = 30mA f = 12GHz 0123 9 1 0 1 1 45 6 78 Output Power (dBm) ηadd Pout ηadd (%)

+j250 +j100 +j50 +j25 +j10 -j10 -j25 -j50 -j100 -j250 S11 S22 180° +90° -90° S21 S12 SCALE FOR |S21| 0.2 0.1

0.5 GHz

25010025 50Ω SCALE FOR |S12| S-PARAMETERS VDS = 4V, IDS = 30mA FREQUENCY S11 S21 S12 S22 (MHZ) MAG ANG MAG ANG MAG ANG MAG ANG FSX017LG General Purpose GaAs FET

For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: CAUTION

  • Do not put these products into the mouth.
  • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
  • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. 0.5 (0.02) 1.0 (0.039)

1.3 Max

(0.051) 0.1 (0.004) 1.5±0.3 (0.059) 1.78±0.15 (0.07) 1.5±0.3 (0.059) 4.78±0.5 Case Style "LG" Metal-Ceramic Hermetic Package Unit: mm(inches) 1. Gate 2. Source 3. Drain 4. Source 1.5±0.3 (0.059) 1.78±0.15 (0.07) 1.5±0.3 (0.059) 4.78±0.5 FSX017LG General Purpose GaAs FET