FSU01LG EUDYNA | Alldatasheet

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Edition 1.2 July 1999 FSU01LG General Purpose GaAs FET Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS 12.0 375 -65 to +175 175 Note V V mW Ptot Tstg Tch Condition Unit Rating ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Note: Mounted on Al2O3 board (30 x 30 x 0.65mm) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 6 volts. 2. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with gate resistance of 2000Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. AVAILABLE CASE STYLES: LG G.C.P.: Gain Compression Point Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Noise Figure Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Symbol IDSS 35 55 75 -5 0- -0.7 -1.2 -1.7 -5 - - 18.0 19.0 - - 0.55 - 19.0 20.0 - VDS = 3V, IDS = 2.7mA VDS = 3V, IDS = 27mA VDS = 3V, VGS = 0V IGS = -2.7µA Channel to Case VDS = 6V IDS = 40mA f = 2GHz VDS = 3V IDS = 10mA f = 2GHz mA mS V dB dB dBm V gm Vp VGSO P1dB G1dB NF Associated Gain - 18.5 - dBGas Thermal Resistance - 300 400 °C/WRth Test Conditions Unit Limit Typ. Max.Min. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Note: The RF parameters are measured on a lot basis by sample testing at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested.

FEATURES

  • High Output Power: P1dB = 20.0dBm (Typ.)
  • High Associated Gain: G1dB = 19.0dB (Typ.)
  • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz
  • Low Bias Conditions: VDS=3V, 10mA
  • Cost Effective Hermetic Microstrip Package
  • Tape and Reel Available

DESCRIPTION

The FSU01LG is a high performance, low noise, GaAs FET designed for PCS/PCN applications as a driver in the 2GHz band. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 200 100 400 300 0 50 100 150 200 Case Temperature (°C) Total Power Dissipation (mW) 123 4 5 Drain-Source Voltage (V) Drain Current (mA) VGS =0V -0.2V -0.4V -0.6V -0.8V -1.0V -1.2V NOISE FIGURE vs. DRAIN-SOURCE CURRENTASSOCIATED GAIN vs. DRAIN-SOURCE CURRENT IDS = 10mA f = 2.0 GHz 10 20 30 40 Drain-Source Current (mA) 19.5 19.0 18.5 18.0

17.5 Associated Gain (dB)

IDS = 10mA f = 2.0 GHz 10 20 30 40 Drain-Source Current (mA) 0.9 0.8 0.7 0.6 0.5 Noise Figure (dB) VDS = 6V VDS = 6V 2, 3V

+j250 +j100 +j50 +j25 +j10 -j10 -j25 -j50 -j100 -j250 S11 S22 180° +90° -90° S21 S12 SCALE FOR |S21| 0.2 2 .05 0.1134

0.4 GHz

25010010 25 50Ω

4 GHz 4 GHz

4 GHz

SCALE FOR |S12| VDS =6V, IDS = 40mA FREQUENCY S11 S21 S12 S22 (MHZ) MAG ANG MAG ANG MAG ANG MAG ANG FSU01LG General Purpose GaAs FET

OUTPUT POWER & IM3 vs. INPUT POWER VDS = 6V f = 2 GHz ∆f = +1 MHz IDS = 40mA -12 -10 -8 -6 -4 -2 0 2 4 6 Total Input Power (dBm) -20 -10 -30 -40 -50 -60 Total Output Power (dBm) IM3 (dBc) Pout IM3 2-Tone Single Tone FSU01LG General Purpose GaAs FET

For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: CAUTION

  • Do not put these products into the mouth.
  • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
  • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. 0.5 (0.02) 1.0 (0.039)

1.3 Max

(0.051) 0.1 (0.004) 1.5±0.3 (0.059) 1.78±0.15 (0.07) 1.5±0.3 (0.059) 4.78±0.5 Case Style "LG" Metal-Ceramic Package Unit: mm(inches) 1. Gate 2. Source 3. Drain 4. Source 1.5±0.3 (0.059) 1.78±0.15 (0.07) 1.5±0.3 (0.059) 4.78±0.5 Gold Plated Leads FSU01LG General Purpose GaAs FET