FRM5W231KT EUDYNA | Alldatasheet

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Technical content

FEATURES

  • Data rate up to 2.5Gb/s
  • -32dBm typ. sensitivity
  • 30µm active area APD chip with GaAs pre- amplifier
  • Small co-axial package with single mode fiber

APPLICATIONS

  • High bit rate long haul optical transmission systems operating at 2.5Gb/s

DESCRIPTION

These APD preamplifiers use an InGaAs APD chip with GaAs IC preamplifier. The KT package is designed for a horizontal PC board mount. The LT package is secured by a vertical flange. Each package is connected with single mode fiber by Nd: YAG welding. The detector preamplifier is DC coupled and has a low electrical output when the APD is illuminated. Edition 1.0 March 1999 InGaAs-APD/Preamp Receiver FRM5W231KT/LT KT LT

Edition 1.0 March 1999 InGaAs-APD/Preamp ReceiverFRM5W231KT/LT Parameter APD Responsivity APD Breakdown Voltage Maximum Overload Symbol R15 R13 OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25°C, λ=1,310/1,550nm, Vss=-5.2V, unless otherwise specified) VB Bandwidth Sensitivity BW Power Supply Current Iss Parameter Storage Temperature Operating Temperature Supply Voltage APD Reverse Voltage Symbol Tstg -40 to +85 -40 to +85 -7 to 0 0 to VB V V °CTop Vss VR (Note 1) APD Reverse Current 0.6 mAIR (Note 2) Ratings Unit ABSOLUTE MAXIMUM RATINGS (Tc=25°C, unless otherwise specified) Pr Po A/W A/W dBm V mA Unit GHz V dBm Limits -30 Max. 0.80 0.75 -1.8 40 65 - -31 dBm--5 - dBm--7 - -32 2.0 Equivalent Input Noise Current Density in pA/ Hz8- 6.5 Temperature Coefficient of VB γ V/°C0.08 0.150.12 AC Transimpedance Zt Ω400 - 600 0.85 0.85 -5.2 40-- Min. Typ. -31- Test Conditions 1,550nm, M=1 1,310nm, M=1 Power Supply Voltage Vss -4.94-5.46 Tc=-40 to +85°C 2.488Gb/s NRZ, PRBS=223-1, B.E.R.=10-10, VR is set at optimum value Tc=-40 to +85°C, M=3 2.488Gb/s NRZ, M=3, PRBS=223-1, B.E.R.=10-10, VR is set at optimum value AC-Coupled, RL=50Ω, Average within BW AC-Coupled, RL=50Ω, M=3 to 15, -3dBm from 1MHz AC-Coupled, f=100MHz, RL=50Ω, Pin <-20dBm, Note 3 ID=10µA Note: (1) VB differs from device to device. VB data is attached to each devices. (2) CW condition (3) γ=dVB/dTC

Edition 1.0 March 1999 InGaAs-APD/Preamp Receiver FRM5W231KT/LT Fig. 2 Relative Frequency Response Relative Response (3dB/div) Frequency, f (GHz) 3.01.50 Tc = 25°C Vss=-5.2V AC-Coupled RL=50Ω Pin=-30dBm λ = 1,310/1,550nm Fig. 1 Output Characteristics Output Voltage Peak to Peak, Vpp(mV) Average Photocurrent, Ip.ave (mA) 0.5 0.5 0.4 0.4 M=15 M=10 M=5 0.3 0.3 0.2 0.2 0.1 0.10 0 0.6 0.6 0.7 Zt ~ 600Ω Tc = 25°C Vss=-5.2V AC-Coupled RL=50Ω 100Mb/s Duty 50% Mark density 50% Fig.3 Equivalent Input Noise Current Density Equivalent Input Noise Current Density, in (pA/sqr. Hz) Frequency, f (GHz) 2.01.00 Tc = 25°C Vss=-5.2V AC-Coupled RL=50Ω Fig.4 Eye Diagram with a 1,550nm, 2.5Gb/s NRZ, 223-1 PRBS incident signal 100ps/div Input optical wave form with Bessel filter Equivalent output wave form at Pin=-32dBm, Tc=25°C, M=optimum

Edition 1.0 March 1999 InGaAs-APD/Preamp ReceiverFRM5W231KT/LT Fig.5 Bit Error Rate Bit Error Rate Received Optical Power (dBm) -30 -25 Tc=+25°C +85°C -40°C -35-40 10-12 10-10 10-8 10-6 10-4 λ=1,310/1,550nm 2.5Gb/s, NRZ Vss=-5.2V M=Optimum Duty 50% Mark Density 50% 2-C1.5 8.4±0.2 8.4±0.2 4.2±0.2 2.0±0.1 14.0±0.15 17.0±0.2 VR OUT GND VSS

10.0 MIN

2.5±0.1

4.4 MAX

32.0 MAX 1000 MIN

4-Ø 0.45±0.05 Ø 6.0 MAX Ø 7.2 MAX Ø 0.9±0.1 GND VSS VR OUT “KT” PACKAGE

7.6 MAX

2.5±0.1 GND VSSVR OUT 17.0±0.2 14.0±0.15 1.0±0.1 4-Ø 0.45±0.05 Ø 6.0 MAX Ø 7.2 MAX Ø 0.9 VR OUT GND VSS “LT” PACKAGE UNIT: mm UNIT: mm

Edition 1.0 March 1999 InGaAs-APD/Preamp Receiver FRM5W231KT/LT Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: CAUTION

  • Do not put this product into the mouth.
  • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
  • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0200M200 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. Americas & R.O.W. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FME, QDD Fujitsu Microelectronics Europe GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 FUJITSU QUANTUM DEVICES LIMITED Global Business Division Global Sales Support Department Shinjuku Daiichiseimei Building, 2-7-1 Nishishinjuku, Shinjuku-ku, Tokyo, 163-0721, Japan TEL: +81-3-5322-3356 FAX: +81-3-5322-3398