FRM3Z231KT EUDYNA | Alldatasheet

Document overview

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Technical content

FEATURES

  • Data rate up to 2.5Gb/s
  • -23dBm typ. sensitivity
  • 30µm active area PIN chip with GaAs pre-amplifier
  • Small co-axial package with multi-mode fiber

APPLICATIONS

  • High bit rate short haul optical transmission systems operating at 2.5Gb/s

DESCRIPTION

These PIN preamplifiers use an InGaAs PIN chip with GaAs IC preamplifier. The KT package is designed for a horizontal PC board mount. The LT package is secured by a vertical flange. Each package is connected with multi-mode fiber by Nd: YAG welding. The detector preamplifier is DC coupled and has a low electrical output when the PIN is illuminated. These devices are in compliance with ITU-T Recommendations and meet Bellcore Requirements. Edition 1.0 March 1999 InGaAs-PIN/Preamp Receiver FRM3Z231KT/LT KT LT

Edition 1.0 March 1999 InGaAs-PIN/Preamp ReceiverFRM3Z231KT/LT Parameter PIN Responsivity AC Transimpedance Maximum Overload Reverse Voltage Symbol R15 R13 OPTICAL & ELECTRICAL CHARACTERISTICS (Ta=-40° to +85°C, λ=1,310/1,550nm, Vss=-5.2V, VR=5V, unless otherwise specified) Zt Bandwidth Sensitivity BW Power Supply Current Iss Parameter Storage Temperature Operating Temperature Supply Voltage PIN Reverse Voltage Symbol Tstg -40 to +85 -40 to +85 -7 to 0 0 to 20 V V °CTop Vss VR PIN Reverse Current 2.0 mAIR (Note 1) Ratings Unit ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) Pr VR Po A/W A/W dBm Ω mA Unit GHz V V dBm Limits -21 Max. 0.80 0.80 -1.8 400 - - -22 dBm-0- dBm--3 - -23 2.0 Equivalent Input Noise Current Density in pA/ Hz 8- 6.5 600 0.85 0.85 -5.2 40- Min. Typ. -22- Test Conditions 1,550nm, M=1 1,310nm, M=1 Power Supply Voltage Vss -4.94-5.46 Ta=-40 to +85°C (Note 2) Ta=-40 to +85°C 2.488Gb/s NRZ, PRBS=223-1, B.E.R.=10-10 Ta=-40 to +85°C Ta=25°C, 2.488Gb/s NRZ, PRBS=223-1, B.E.R.=10-10 AC-Coupled, RL=50Ω, Average within BW AC-Coupled, RL=50Ω, Pin <-27dBm, -3dBm from 1MHz AC-coupled, f=100MHz, RL=50Ω, Pin <-20dBm Note: (1) CW condition (2) Maximum Input Optical Power, Pmax is defined as the optical power when the variation of F.W.H.M. of the output waveform is less than 10% compared with that of the low input optical power level. (3) Optical characteristics are specified on the condition that single mode fiber is used as the optical source for testing. (4) No data is available for either device.

Edition 1.0 March 1999 InGaAs-PIN/Preamp Receiver FRM3Z231KT/LT Fig. 2 Relative Frequency Response Relative Response (3dB/div) Frequency, f (MHz) 1000100101 Ta = 25°C Vss=-5.2V AC-Coupled RL=50Ω Pin=-30dBm λ = 1,310/1,550nm Fig. 1 Output Characteristics Output Voltage Peak, Vpp(mV) Average Photocurrent, Ip.ave (mA) 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0.2 0.1 0.10 0 0.6 0.6 0.7 Zt ~ 600Ω Tc = 25°C Vss=-5.2V AC-Coupled RL=50Ω 100Mb/s Duty 50% Mark density 50% Fig.3 Equivalent Input Noise Current Density Relative Input Noise Current Density, in (pA/sqr. Hz) Frequency, f (GHz) 2.01.00 Tc = 25°C Vss=-5.2V AC-Coupled RL=50Ω Fig.4 Eye Diagram with a 1,310nm, 2.5Gb/s NRZ, 223-1 PRBS incident signal 100ps/div Input optical wave form with Bessel filter Equivalent output wave form at Pin=-22dBm, Tc=25°C, M=optimum

Edition 1.0 March 1999 InGaAs-PIN/Preamp ReceiverFRM3Z231KT/LT Fig.5 Bit Error Rate Bit Error Rate Received Optical Power (dBm) -20 Ta=+25°C +85°C -40°C -25-30 10-12 10-10 10-8 10-6 10-4 λ=1,310/1,550nm 2.5Gb/s, NRZ Vss=-5.2V VR=5V 2-C1.5 8.4±0.2 8.4±0.2 4.2±0.2 2.0±0.1 14.0±0.15 17.0±0.2 VR OUT GND VSS

10.0 MIN

2.5±0.1

4.4 MAX

32.0 MAX 1000 MIN

4-Ø 0.45±0.05 Ø 6.0 MAX Ø 7.2 MAX Ø 0.9±0.1 GND VSS VR OUT “KT” PACKAGE

7.6 MAX

2.5±0.1 GND VSSVR OUT 17.0±0.2 14.0±0.15 1.0±0.1 4-Ø 0.45±0.05 Ø 6.0 MAX Ø 7.2 MAX Ø 0.9 VR OUT GND VSS “LT” PACKAGE UNIT: mm UNIT: mm

Edition 1.0 March 1999 InGaAs-PIN/Preamp Receiver FRM3Z231KT/LT For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. Americas & R.O.W. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111

55 Schanck Road,

Freehold, NJ 07728-2964, U.S.A. Phone: (732) 303-0282 FAX: (732) 431-3393 www.fcsi.fujitsu.com FUJITSU MIKROELECTRONIK GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ, UK Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 FUJITSU QUANTUM DEVICES, LTD. Asia & Japan 2-7-1, Nishi Shinjuku Shinjuku-ku, Tokyo 163-0721 Japan Phone: 3-5322-3356 FAX: 3-5322-3398 Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: CAUTION

  • Do not put this product into the mouth.
  • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
  • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0199M200