FRM3Z121KT EUDYNA | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

FEATURES

  • Data rate up to 156Mb/s
  • High Responsivity: 0.85A/W at 1,310nm
  • High temperature operation up to 85°C

APPLICATIONS

  • Medium bit rate standard medium haul optical transmission system at STM-1 (OC-3)

DESCRIPTION

These PIN preamplifiers use an InGaAs PIN with a GaAs IC preamplifier. Package style is a hermetically sealed, epoxyless coaxial package with a multimode fiber pigtail. Edition 1.0 March 1999 InGaAs-PIN/Preamp Receiver FRM3Z121KT/LT KT LT

Maximum Input Optical Power Power Supply Current Optical Return Loss Symbol R ORL OPTICAL & ELECTRICAL CHARACTERISTICS (Ta=-40° to +85°C, Vss=-5.2V, Vr=GND level and λ=1,310/1,550nm unless otherwise specified) Zt Bandwidth Sensitivity BW Equivalent Input Current Density in Recommended Supply Vss Parameter Storage Temperature Operating Case Temperature IC Supply Voltage PD Supply Voltage Symbol Tstg -40 to +85 -40 to +85 -7 to +0 0 to +20 V V °CTop Vss Vr PD Reverse Current 500 µAIr Maximum Input Power 0 dBmPo max Ratings Unit ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Pr Iss Pmax A/W dBm KΩ mA dB Unit MHz pA/ Hz V dBm Limits -37.5 Max. 0.8 -110 8.0 - - -38.5 dBm--7 - -39 10.5 0.85 -5.2 1.12 1.4- -4.94-5.46 -30 Min. Typ. -38- Test Conditions λ=1,310nm PD Voltage Vr V200 Ta=-40 to +85°C 156Mb/s NRZ, 223-1 Ta=25°C AC-Coupled, RL=50Ω, -3dBm from 1MHz AC, RL=50Ω, Pin <-20dBm Note (1) avg. within 110MHz Note: (1) Maximum Input Optical Power, Pmax is defined as the optical power when the variation of F.W.H.M. of the output waveform is less than 10% compared with that of the low input; optical power level. (2) No data is accompanied with each device. (3) Optical characteristics are specified on the condition that single mode fiber is used as the optical source for testing.

Fig. 1 Normarized Output Voltage as a function of Peak Photo Current Fig. 2 Relative Frequency Response Fig. 3 Equivalent Input Noise Current Density Frequency, f (MHz) Equivalent input noise current density in (pA/√Hz) Relative Response (dB) 1001 1000 10 Pin=-10dBm Pin=-35dBm Delta Output Voltage, ∆Vout (V) Photo Current (µA) Frequency, f(MHz) -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 50 100 Ta = 25°C Vss=-5.2V VR=5V CW condition RL=∞ λ=1,310nm Ta = 25°C Vss=-5.2V VR=5V AC-Coupled RL=50Ω λ=1,310nm/1,550nm Ta = 25°C Vss=-5.2V AC-Coupled RC=50Ω 100010010 1ns/Div50mV/Div Fig. 4 Eye diagram with a 1,310nm,156Mbps NRZ, 223-1 PRBS incident signal at Tc = 25°C Pin=-7dBm with Bessel filter

Fig. 5 Bit Error Rate at 1,310nm and a 156Mbps NRZ 223-1 PRBS for various case temperture λ=1,310nm 156Mb/s NRZ Vss=-5.2V VR=GND Bit Error Rate Received Optical Power (dBm) 10-3 10-4 10-5 10-6 10-7 10-8 10-9 10-10 10-11 10-12 -45 -40 -35 -30 Ta=25°C 85°C -40°C 2-C1.5 8.4±0.2 8.4±0.2 4.2±0.2 2.0±0.1 14.0±0.15 17.0±0.2 VR OUT GND VSS

10.0 MIN

2.5±0.1

4.4 MAX

32.0 MAX 1000 MIN

4-Ø0.45 ±0.05 Ø6.0 MAX Ø7.2 MAX Ø0.9 ±0.1 GND VSS VR OUT “KT” PACKAGE

7.6 MAX

2.5±0.1 GND VSSVR OUT 17.0±0.2 14.0±0.15 1.0±0.1 4-Ø 0.45±0.05 Ø 6.0 MAX Ø 7.2 MAX Ø 0.9 VR OUT GND VSS “LT” PACKAGE UNIT: mm UNIT: mm

Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0199M200 Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: CAUTION

  • Do not put this product into the mouth.
  • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
  • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 FUJITSU QUANTUM DEVICES LIMITED Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582