FR5305 BYCHIP | Alldatasheet
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Features
VDS= -60V, ID= -30A RDS(ON) < 55mΩ @ VGS = -10V RDS(ON) < 65mΩ @ VGS = -4.5V
- Advanced Trench Technology
- Provide Excellent RDS(ON) and Low Gate Charge
- Lead Free and Green Available 100% UIS TESTED! 100% ΔVds TESTED! General Features www.bychip.cn Pin Assignment Schematic DiagramTO-252-2L Top View FR5305 v1.0
Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -60 - - V Zero Gate Voltage Drain Current IDSS VDS=-60V,VGS=0V - - -1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1.0 -2.0 V VGS=-10V, ID=-8A - 55 m Ω Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-8A - 65 m Ω Forward Transconductance gFS VDS=-5V,ID=-8A - 15 - S Dynamic Characteristics (Note4) Input Capacitance Clss - 1108 - PF Output Capacitance Coss - 73.7 - PF Reverse Transfer Capacitance Crss VDS=-30V,VGS=0V, F=1.0MHz - 58.2 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 8 - nS Turn-on Rise Time tr - 4 - nS Turn-Off Delay Time td(off) - 32 - nS Turn-Off Fall Time tf VDD=-30V, RL=3.75Ω， VGS=-10V,RG=3Ω - 7 - nS Total Gate Charge Qg - 23.4 - nC Gate-Source Charge Qgs - 4.1 - nC Gate-Drain Charge Qgd VDS=-30,ID=-8A, VGS=-10V - 4.8 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-16A - -1.2 V Diode Forward Current (Note 2) IS - - -16 A Reverse Recovery Time trr - 25 nS Reverse Recovery Charge Qrr TJ = 25°C, IF =- 8A di/dt = -100A/μs(Note3) - 31 nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production www.bychip.cn FR5305 v2.0